Abstract:Co-monodoped ZnO (ZnCoO), Co–Ga codoped ZnO (Zn(Co,Ga)O), and Co–Na codoped ZnO (Zn(Co,Na)O) thin films were prepared on sapphire substrates by pulsed laser deposition. Their structural, optical, electrical, and magnetic properties were studied to clarify the origin of ferromagnetism (FM) in the ZnCoO system. Both the ZnCoO and Zn(Co,Ga)O films showed an n-type conductivity with a similar room-temperature ferromagnetism (RTFM), although the electron concentration of the Zn(Co,Ga)O film (∼1021cm−3) was evidently higher than that of the ZnCoO film. The increasing donor density did not affect the FM greatly. The Zn(Co,Na)O film showed a p-type conductivity, but it did not show RTFM. To explore the mechanism of FM, the samples were annealed after growth. The ZnCoO and Zn(Co,Ga)O films annealed in the Ar ambient displayed similar FM features to the as-grown ones, but all of them lost their original RTFM when annealed in the O2 ambient. The Zn(Co,Na)O film annealed in Ar exhibited a high resistivity, while a better p-type behavior than the as-grown one was observed for the Zn(Co,Na)O film annealed in O2, however, both of them showed paramagnetism. No clusters, precipitates, or secondary phases were found from the X-ray diffraction pattern and the photoelectron K-edge X-ray absorption near-edge structure measurements. Together with the X-ray spectroscopy and photoluminescence results, it was found that the oxygen vacancy (Vo), a donor-related defect, played a vital role in determining the RTFM in the ZnCoO system.

Evidence of structural defect enhanced room-temperature ferromagnetism in Co-doped ZnO.

Evidence Of The Defect-Induced Ferromagnetism In Na And Co Codoped Zno

Effect of Defects on Room-Temperature Ferromagnetism in Co and Na Co-Doped ZnO

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film

Donor Defects Enhanced Ferromagnetism in Co:Zno Films

Defect Induced Room Temperature Ferromagnetism in High Quality Co-doped ZnO Bulk Samples

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Room-temperature Ferromagnetism in Co-doped ZnO Diluted Magnetic Semiconductor

Enhanced Room Temperature Ferromagnetism in Co-Doped Zno Mediated by Interstitial H

High-Tc ferromagnetism in a Co-doped ZnO system dominated by the formation of a zinc-blende type Co-rich ZnCoO phase.

Tunable Ferromagnetic Behaviors Observed in Highly Orientated Co‐Doped ZnO Thin Films by the Bandgap Engineering

Room-Temperature Ferromagnetism in Co-Doped Zno Fabricated by Coprecipitation Method

Ferromagnetism Induced by Defect Complex in Co-doped ZnO

Magnetism of Co-Doped Zno Epitaxially Grown on A Zno Substrate

Hydrogenation-Induced Room-Temperature Ferromagnetism in Co-Doped ZnO Nanocrystals

Room-Temperature Ferromagnetism in Co-Doped Zno Bulk Induced by Hydrogenation

Substrate-Dependent Magnetization In Co-Doped Zno Insulating Films

Evidence of Matrix Lattice Distortion in Zn<sub>1−<i>x</i></sub>Co<sub><i>x</i></sub>O Nanocrystals

Intrinsic room temperature ferromagnetism in Co-implanted ZnO

Ferromagnetism Induced by Donor-Related Defects in Co-doped ZnO Thin Films