Abstract:Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (VO), zinc vacancy (VZn), oxygen at an interstitial site (Oi), Zn at an interstitial site (Zni), Zn at VO (ZnO), O at VZn(OZn), and an antisite pair (combination of the preceding two defects). In addition, defect complexes like (VO+Zni) and Zn-vacancy clusters are studied. The Schokkty pair (VO+VZn) and Frenkel pairs [(VO+Oi) and (VZn+Zni)] are considered theoretically for the first time. Upon comparing the formation energies of these defects, we find that VO would be the dominant intrinsic defect under both Zn-rich and O-rich conditions and it is a deep double donor. Both ZnO and Zni are found to be shallow donors. The low formation energy of donor-type intrinsic defects could lead to difficulty in achieving p-type conductivity in ZnO. Defect complexes have charge transitions deep inside the band gap. The red, yellow, and green photoluminescence peaks of undoped samples can be assigned to some of the defect complexes considered. It is believed that the red luminescence originates from an electronic transition in VO, but we find that it can originate from the antisite ZnO defect. Charge density and electron-localization function analyses have been used to understand the effect of these defects on the ZnO lattice. The electronic structure of ZnO with intrinsic defects has been studied using density-of-states and electronic band structure plots. The acceptor levels introduced by VZn are relatively localized, making it difficult to achieve p-type conductivity with sufficient hole mobility.

Time-Domain Observation of Spectral Diffusion in Defective ZnO

Defect study in ZnO related structures—A multi-spectroscopic approach

Observation of the Defect States in Individual Co-Doped Zno Dilute Magnetic Semiconducting Nanostructures by Electron Energy-Loss Spectroscopy

Probing Defects in ZnO by Persistent Phosphorescence

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

Anisotropic Li diffusion in pristine and defective ZnO

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

The defect-state-assisted enhancement of high harmonic generation in bulk ZnO

Defect-regulated charge carrier dynamics in two-dimensional ZnO/MoS 2 heterostructure

Defect Engineering through Field-Effect-Induced Sensitization of Surface-Confined Grain Coalescence: A Route to Enhanced Electron Mobility in Li-Doped ZnO

Direct Observation of Iso-Frequency Contour of Surface Modes in Defective Photonic Crystals in Real Space

The Photoluminescence, Ultrafast Nonlinear Optical Properties and Carrier Dynamics of 1D In-doped ZnO Nanostructures: Experiment and Mechanism

Identification of Defect-Related Emissions in ZnO Hybrid Materials

Ultrafast formation of topological defects in a two-dimensional charge density wave

First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO

Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

Defects inducing anomalous exciton kinetics in monolayer WS2

Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Recent progress of the native defects and p-type doping of zinc oxide