Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

Rui Wang,Wen-Zhu Shao,Yue Liu,Bo Xu,Zhao-Yuan Sun,Hui Li,Chang-Jin Zhang,Cheng-Yan Xu,Yang Li,Liang Zhen

DOI: https://doi.org/10.1063/5.0199440

IF: 4

2024-04-29

Applied Physics Letters

Abstract:As a rediscovered ternary two-dimensional (2D) material, defect-rich Znln2S4 has great potential for energy-harvesting applications. However, the effect of defects on its physical properties and device performance remains elusive. Herein, we explored the influence of defects (S vacancies and In–Zn substitutions) in few-layer Znln2S4 on the charge transport and photoelectric performance. It is demonstrated that the defect-rich Znln2S4 device exhibits two-dimensional variable range hopping transport mechanism, with uniform charge transport along the channel and low contact resistance at the electrical contacts of Znln2S4/Au. Importantly, due to the contribution of the donor and acceptor energy levels inside the bandgap, the flake exhibits pronounced extrinsic absorption, leading to the competitive photodetector performance under sub-bandgap photo-excitation. Explicitly, the device exhibits a maximum responsivity of 4.08 × 104 A W−1, a photo-gain of >108 electrons per photon, and a specific detectivity of ∼1015 Jones under 532 nm laser excitation, with detection wavelength extending from 400 to 980 nm. Our findings underscore the significant potential of defect-engineering to enrich the functionalities of 2D semiconductors.

physics, applied