Abstract:The two-dimensional (2D) semiconductor material of InSe has attracted attention due to its excellent electrical properties and moderate adjustable bandgap. The vacancies defects in the material not only affect the optical and electrical properties, but also affect the environmental stability. Compared with other phases in InSe materials, δ-InSe has superior material properties, however, studies on the effects on the environmental stability of this material have not been reported. In this paper, we systematically investigate the stability of 2D δ-InSe materials under oxygen environment based on density functional theory. The results show that: Firstly, in an oxygen environment, the perfect δ-InSe surface exhibits good inertness and stability, with O 2 molecules requiring an exceptionally high energy barrier of 1.827eV to transition from physical adsorption to chemical adsorption on its surface. Secondly, the presence of Se vacancies (V Se ) promotes the oxidation reaction of δ-InSe, which only requires overcoming a low energy barrier of 0.044eV. This suggests that the stability of δ-InSe in an oxygen environment is significantly reduced by the presence of V Se . The oxidation of O 2 molecules δ-InSe monolayer is beneficial for the dissociation and adsorption of H 2 O molecules. Finally, the oxidation rate of δ-InSe with In vacancies (V In ) is slower, with the adsorption energy and charge transfer involved in the physical adsorption of O 2 molecules on the V In surface being similar to those on a perfect surface. The oxidation process requires overcoming a higher energy barrier of 1.234eV. The findings of this study will provide theoretical guidance for a better understanding of the oxidation behavior of single vacancy defects in monolayer δ-InSe, as well as serving as reference for experimental preparation of high-reliability 2D δ-InSe devices.

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