Abstract:The two-dimensional (2D) semiconductor material of InSe has attracted attention due to its excellent electrical properties and moderate adjustable bandgap. The vacancies defects in the material not only affect the optical and electrical properties, but also affect the environmental stability. Compared with other phases in InSe materials, δ-InSe has superior material properties, however, studies on the effects on the environmental stability of this material have not been reported. In this paper, we systematically investigate the stability of 2D δ-InSe materials under oxygen environment based on density functional theory. The results show that: Firstly, in an oxygen environment, the perfect δ-InSe surface exhibits good inertness and stability, with O 2 molecules requiring an exceptionally high energy barrier of 1.827eV to transition from physical adsorption to chemical adsorption on its surface. Secondly, the presence of Se vacancies (V Se ) promotes the oxidation reaction of δ-InSe, which only requires overcoming a low energy barrier of 0.044eV. This suggests that the stability of δ-InSe in an oxygen environment is significantly reduced by the presence of V Se . The oxidation of O 2 molecules δ-InSe monolayer is beneficial for the dissociation and adsorption of H 2 O molecules. Finally, the oxidation rate of δ-InSe with In vacancies (V In ) is slower, with the adsorption energy and charge transfer involved in the physical adsorption of O 2 molecules on the V In surface being similar to those on a perfect surface. The oxidation process requires overcoming a higher energy barrier of 1.234eV. The findings of this study will provide theoretical guidance for a better understanding of the oxidation behavior of single vacancy defects in monolayer δ-InSe, as well as serving as reference for experimental preparation of high-reliability 2D δ-InSe devices.

Effect of single vacancy defects on the stability of two-dimensional δ-InSe

Theoretical insight into the interaction of O2 and H2O molecules with the perfect and the defective InSe monolayers

Effect of Te doping on oxidation resistance and electronic structure of two-dimensional InSe

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe

Oxidation Mechanism and Protection Strategy of Ultrathin Indium Selenide: Insight from Theory

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Defects-induced oxidation of two-dimensional β-In2S3 and its optoelectronic properties

The structures, electronic and photoelectronic properties of the line defects in two-dimensional Bi2O2Se

Native Defects and Substitutional Impurities in Two-Dimensional Monolayer Inse

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Origin of N-Type Conductivity in Two-Dimensional InSe: in Atoms from Surface Adsorption and Van Der Waals Gap

Vacancies and oxidation of 2D group-IV monochalcogenides

Effects of oxygen contamination on monolayer GeSe: A computational study

Interaction between the small gas molecules and the defective WSe2 monolayer

Phase Instability in Van Der Waals In2Se3 Determined by Surface Coordination

Strain Effect on Air-Stability of Monolayer CrSe2

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Structure, Stability, and Kinetics of Vacancy Defects in Monolayer PtSe2: A First-Principles Study

Two-dimensional Bi2SeO2 and Its Native Insulators for Next-Generation Nanoelectronics

First-principles study of the effect of doping on the optoelectronic properties of defective monolayers of MoSe2

Ab-Initio Simulations of Monolayer InSe and MoS2 Strain Effect: from Electron Mobility to Photoelectric Effect