Theoretical insight into the interaction of O2 and H2O molecules with the perfect and the defective InSe monolayers

Dongwei Ma,Tingxian Li,Chaozheng He,Zhiwen Lu,Zhansheng Lu,Zongxian Yang,Yuanxu Wang

DOI: https://doi.org/10.48550/arXiv.1705.05140

2017-05-15

Abstract:By using first-principles calculation, the interaction of O2 and H2O molecules with the pristine and the defective InSe monolayers is studied. It is predicted that the single Se and In vacancies exhibit significantly enhanced chemical activity toward the adsorbates compared with the perfect InSe lattice site, and the Se vacancies have a much higher chemical activity than the In vacancies. H2O molecule should be only physisorbed on the various InSe monolayers at ambient conditions, according to the calculated energies. The doping of the various InSe monolayers is discussed by the physisorbed H2O. The vacancies show a much higher chemical activity toward O2 than H2O. Although O2 molecules are still physisorbed on the pristine InSe monolayer, they will be chemisorbed on the defective InSe monolayers. Especially, our calculated energies suggest that the surface oxidation of the 2D InSe semiconductor should be dominated by the defects that expose under-coordinated host atoms, especially In atoms. Our theoretical results can help better understanding the doping and the oxidation of the 2D InSe semiconductor under ambient conditions.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the interactions between O₂ and H₂O molecules and perfect (defect - free) and defective InSe monolayers. Specifically, the research focuses on the following aspects:

1. **Enhanced Chemical Activity**: It was found that single selenium (Se) and indium (In) vacancies significantly enhance the chemical activity towards adsorbates (such as O₂ and H₂O). In particular, selenium vacancies show higher chemical activity than indium vacancies.

2. **Adsorption Behavior**: Under environmental conditions, H₂O molecules attach to various InSe monolayers only through physisorption. In contrast, although O₂ molecules are also physisorbed on perfect InSe monolayers, chemisorption occurs on defective InSe monolayers.

3. **Oxidation Mechanism**: In particular, the calculation results show that the surface oxidation of 2D InSe semiconductors is mainly caused by defects dominated by exposed under - coordinated host atoms (especially In atoms).

4. **Doping Effect**: The paper also discusses the doping effect of physisorbed H₂O on different InSe monolayers and points out that these defects significantly enhance the interaction with gas molecules.

### Formula Summary

- **Defect Formation Energy** \(E_f\):
\[
E_f = E_{\text{tot(defect)}} - E_{\text{tot(pristine)}}+\mu_{\text{host}}
\]
where \(E_{\text{tot(defect)}}\) and \(E_{\text{tot(pristine)}}\) are the total energies of defective and defect - free InSe monolayers respectively, and \(\mu_{\text{host}}\) is the chemical potential of the removed Se or In atom.

- **Adsorption Energy** \(E_{\text{ad}}\):
\[
E_{\text{ad}} = E_{\text{InSe}}+E_M - E_{\text{InSe - M}}
\]
where \(E_M\) is the total energy of a free O₂ or H₂O molecule, and \(E_{\text{InSe}}\) and \(E_{\text{InSe - M}}\) are the total energies of the support (InSe monolayer) without and with adsorbed molecules respectively. A positive adsorption energy indicates that the adsorption process is exothermic and energetically favorable, and the opposite is true for a negative value.

### Conclusion

This research reveals the interaction mechanisms between O₂ and H₂O molecules and InSe monolayers through theoretical calculations, especially in the case of defects, providing important insights for understanding and controlling the physical properties of 2D InSe semiconductor materials under environmental conditions. These insights are helpful for guiding control and optimization in experiments and promoting the application development of 2D InSe semiconductors.