Abstract:In2Se3/InSe vertical heterojunctions are prepared with specific phases by optimizing the growth conditions using 2D InSe as the seeding material. Meanwhile, the microstructural mechanism for the temperature‐dependent phase evolution of β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 is revealed by using the state‐of‐the‐art Cs‐STEM technique. It has been found that β‐In2Se3 is the intermediate state for the phase transition between different In2Se3 polymorphs. The polymorphic nature of In2Se3 leads to excellent phase‐dependent physical properties including ferroelectricity, photoelectricity, and especially the intriguing phase change ability, making the precise phase modulation of In2Se3 of fundamental importance but very challenging. Here, the growth of In2Se3 with desired‐phase is realized by temperature‐controlled selenization of van der Waals (vdW) layered bulk γ‐InSe. Detailed results of Raman spectroscopy, scanning electron microscopy (SEM), and state‐of‐the‐art spherical aberration‐corrected transmission electron microscopy (Cs‐TEM) clearly and consistently show that β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 can be perfectly obtained at ≈270, ≈300, and ≈600 °C, respectively. Further comprehensive atomic imaging analyses confirm that the seeding material, InSe, plays a critical role in the low‐temperature epitaxial growth of vdW‐layered In2Se3, and, more interestingly, β‐In2Se3 acts as an intermediate phase between 3R and 2H α‐In2Se3 transitions. This investigation not only provides a simple yet versatile strategy for the phase modulation of In2Se3, but also sheds light on the temperature‐dependent phase evolution of In2Se3.

Phase Instability in Van Der Waals In2Se3 Determined by Surface Coordination

Structural Phase Transition of Multilayer VSe2.

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

First-principles investigation of structural and electronic properties of α phase In2Se3

Substrate-induced phase control of In2Se3 thin films

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Influence of Van Der Waals Epitaxy on Phase Transformation Behaviors in 2D Heterostructure

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe

Optical Studies of the Thermal Stability of InSe Nanosheets

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Thermal stability of VSe<inf>2</inf> investigated by in situ transmission electron microscope

Band structure, ferroelectric instability, and spin-orbital coupling effect of bilayer -In<sub>2</sub>Se<sub>3</sub>

Thermal Stability and Oxidation of Layer-Structured Rhombohedral In3Se4 Nanostructures

Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures

Atomically Resolving Polymorphs and Crystal Structures of In2Se3

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Air stability and composition evolution in van der Waals Fe3GeTe2

Atomic Visualization and Switching of Ferroelectric Order in Β‐in2se3 Films at the Single Layer Limit