Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

First-principles investigation of structural and electronic properties of α phase In2Se3

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

First-principles study of phase transition in the α-In2Se3/metal heterostructures

Band structure, ferroelectric instability, and spin-orbital coupling effect of bilayer -In<sub>2</sub>Se<sub>3</sub>

Phonon thermal transport in ferroelectric α-In2Se3 via first-principles calculations

Recent advances of phase transition and ferroelectric device in two-dimensional In2Se3

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Phase Instability in Van Der Waals In2Se3 Determined by Surface Coordination

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$

Electronic bandstructure of in-plane ferroelectric van der Waals $β'-In_{2}Se_{3}$

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3

The First Principle Study: Electronic and Optical Properties in Bi2Se3

Thickness-Dependent Band Gap Of Alpha-In2se3: From Electron Energy Loss Spectroscopy To Density Functional Theory Calculations

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics