Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$

Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3

Band structure, ferroelectric instability, and spin-orbital coupling effect of bilayer -In<sub>2</sub>Se<sub>3</sub>

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Electronic bandstructure of in-plane ferroelectric van der Waals $β'-In_{2}Se_{3}$

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial Β–in2se3 Thin Films

3D Domain Arrangement in van der Waals Ferroelectric α‐In2Se3

Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

Atomically Thin Α-In2se3: an Emergent Two-Dimensional Room Temperature Ferroelectric Semiconductor

First-principles investigation of structural and electronic properties of α phase In2Se3

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Emergence of ferroelectricity in a nonferroelectric monolayer

Electrostatic Gating-Dependent Multiple Band Alignments in Ferroelectric α-In2Se3/α-Te van der Waals Heterostructures

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Electric-Field-Induced Room-Temperature Antiferroelectric–Ferroelectric Phase Transition in van der Waals Layered GeSe

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

In-Plane Ferrielectric Order in van der Waals β'-In2Se3