Abstract:Two-dimensional (2D) piezoelectricity has been extensively addressed in recent years, which leads to great potential applications in advanced smart devices. However, the vertical piezoelectric response of numerous 2D layered materials is theoretically absent when applying electric field or strain perpendicular to its surface because of the inversion symmetry. Recently, vertical piezoelectric properties of In2Se3, which exhibits a low piezoelectric response, were reported. Therefore, enhancing the piezoelectric performance in 2D layered materials is still challenging. Here, we report a remarkable out-of-plane piezoelectric performance in the In2Se3/MoS2 van der Waals (vdW) heterostructure. Such a vdW heterostructure shows a high positive value of piezoelectric coefficient d33. By combining the experimental studies and density functional theory calculations, the excellent piezoelectric properties result from the type II band alignment, which causes a larger interfacial dipole moment. Moreover, the high-precision piezoelectric actuators in 2D atomic scale are demonstrated. By changing the driven voltage, the deformation of the upper surface of piezoelectric actuators linearly modulated. Our study opens the door to design next-generation nanoelectronics and multifunctional coupling atomic-scale devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c02513?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c02513</a>.Optical microscope, atomic force microscope, Raman spectra, PFM amplitude image, thickness dependence on piezoelectric coefficient, CVD-grown monolayer MoS2 and WS2, UPS spectra of vdW heterostructure (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c02513/suppl_file/an0c02513_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Room-temperature Out-of-plane and In-Plane Ferroelectricity of Two-Dimensional Β-Inse Nanoflakes

Layer-dependent Ferroelectricity in 2H-Stacked Few-Layer Α-In2se3

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Ferroelectricity and Piezoelectricity in Elemental Α -X6 Structure

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Layer-dependent ferroelectricity in 2H-stacked few-layer α-In 2 Se 3

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Periodic Ferroelectric Stripe Domains in α-In 2 Se 3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

IP and OOP ferroelectricity in hexagonal γ-In2Se3 nanoflakes grown by chemical vapor deposition

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

3D Domain Arrangement in van der Waals Ferroelectric α‐In2Se3

Enhanced Piezoelectric Response of Layered In 2 Se 3 /MoS 2 Nanosheet-Based van der Waals Heterostructures

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Giant Piezoresistivity in a Van Der Waals Material Induced by Intralayer Atomic Motions