A straightforward one-pot approach to two new defect energy levels in ZnS

Xiaoman Yang,Wenhao Gu,Chen Yuan,Zhicheng Yang,Shaoqian Shi,Zhe Liu,Shuyu Liang,Fei Teng

DOI: https://doi.org/10.1039/d0ce01122c

IF: 3.756

2021-01-01

CrystEngComm

Abstract:ZnS with double defect energy levels shows an amazing visible light photoactivity.

chemistry, multidisciplinary,crystallography

What problem does this paper attempt to address?

Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

Rui Wang,Wen-Zhu Shao,Yue Liu,Bo Xu,Zhao-Yuan Sun,Hui Li,Chang-Jin Zhang,Cheng-Yan Xu,Yang Li,Liang Zhen

DOI: https://doi.org/10.1063/5.0199440

IF: 4

2024-04-29

Applied Physics Letters

Abstract:As a rediscovered ternary two-dimensional (2D) material, defect-rich Znln2S4 has great potential for energy-harvesting applications. However, the effect of defects on its physical properties and device performance remains elusive. Herein, we explored the influence of defects (S vacancies and In–Zn substitutions) in few-layer Znln2S4 on the charge transport and photoelectric performance. It is demonstrated that the defect-rich Znln2S4 device exhibits two-dimensional variable range hopping transport mechanism, with uniform charge transport along the channel and low contact resistance at the electrical contacts of Znln2S4/Au. Importantly, due to the contribution of the donor and acceptor energy levels inside the bandgap, the flake exhibits pronounced extrinsic absorption, leading to the competitive photodetector performance under sub-bandgap photo-excitation. Explicitly, the device exhibits a maximum responsivity of 4.08 × 104 A W−1, a photo-gain of >108 electrons per photon, and a specific detectivity of ∼1015 Jones under 532 nm laser excitation, with detection wavelength extending from 400 to 980 nm. Our findings underscore the significant potential of defect-engineering to enrich the functionalities of 2D semiconductors.

physics, applied
Defect energy levels and persistent luminescence in Cu-doped ZnS

Khang Hoang,Camille Latouche,Stéphane Jobic

DOI: https://doi.org/10.1016/j.commatsci.2019.03.016

2019-03-15

Abstract:Zinc sulfide (ZnS) based materials are widely used in many applications. Yet, due to a lack of detailed knowledge of defect energy levels, the electrical properties and luminescence mechanisms in the materials still give rise to debate. Here, we report a first-principles study of native point defects and impurities in zincblende ZnS using hybrid density-functional calculations. We find that cation and anion vacancies and antisite defects introduce deep defect levels in the band gap and can act as donors or acceptors depending on the position of the Fermi level. The substitutional impurity Cu$_{\rm Zn}$ acts as a deep acceptor and thus does not contribute to p-type conductivity. Substitutional impurities Al$_{\rm Zn}$ and Cl$_{\rm S}$, on the other hand, are shallow donors. More importantly, we identify the isolated (i.e., unassociated) Cu$_{\rm Zn}$ as a source of the green luminescence observed in ZnS-based phosphors and Cu$_{\rm Zn}$$-$Al$_{\rm Zn}$ and Cu$_{\rm Zn}$$-$Cl$_{\rm S}$ defect complexes as sources of blue luminescence. The materials may have both green and blue emissions with the relative intensity dependent on the ratio between the unassociated defect and defect complex concentrations, which is also consistent with experimental observations.

Materials Science
Defect-Related White-Light Emission from Zno in an N-Mg0.2zn0.8o/N-Zno/Sio (X) Heterostructure on N-Si

Peiliang Chen,Xiangyang Ma,Yuanyuan Zhang,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1007/s11664-010-1173-9

IF: 2.1

2010-01-01

Journal of Electronic Materials

Abstract:An n-Mg0.2Zn0.8O/n-ZnO/SiO x (x < 2) heterostructure has been fabricated on n-Si by sputtering and electron-beam evaporation. The device showed nonrectifying behavior, and emitted strong white light under reverse bias with positive voltages applied to n-Si. The white-light electroluminescence (EL) is believed to result from electron–hole recombination at defect levels of ZnO. The EL mechanism has been tentatively explained in terms of the energy band structure of the device under forward and reverse bias.
New energy with ZnS: novel applications for a standard transparent compound

Pino D’Amico,Arrigo Calzolari,Alice Ruini,Alessandra Catellani

DOI: https://doi.org/10.1038/s41598-017-17156-w

IF: 4.6

2017-12-01

Scientific Reports

Abstract:We revise the electronic and optical properties of ZnS on the basis of first principles simulations, in view of novel routes for optoelectronic and photonic devices, such as transparent conductors and plasmonic applications. In particular, we consider doping effects, as induced by Al and Cu. It is shown that doping ZnS with Al imparts a n-character and allows for a plasmonic activity in the mid-IR that can be exploited for IR metamaterials, while Cu doping induces a spin dependent p-type character to the ZnS host, opening the way to the engineering of transparent p-n junctions, p-type transparent conductive materials and spintronic applications. The possibility of promoting the wurtzite lattice, presenting a different symmetry with respect to the most stable and common zincblende structure, is explored. Homo- and heterojunctions to twin ZnO are discussed as a possible route to transparent metamaterial devices for communications and energy.

multidisciplinary sciences
Enhancement of Two-Photon Fluorescence and Low Threshold Amplification of Spontaneous Emission of Zn-processed CuInS2 Quantum Dots

Pengqi Lu,Ruifeng Li,Ni Yao,Xusheng Di,Zhenyu Ye,Kai Zheng,Weiguang Kong,Wei Fang,Shuang Li,Qinghua Xu,Huizhen Wu

DOI: https://doi.org/10.1021/acsphotonics.7b01255

IF: 7

2018-01-01

ACS Photonics

Abstract:Heavy-metal-free I-III-VI2 quantum dots (QDs) have recently emerged as favorable alternatives to toxic II-VI QDs for optoelectronic and biological applications, but low fluorescence efficiency is a key issue related to the promising nanocrystals. In this work, we demonstrate big enhancement of two-photon fluorescence efficiency and low threshold two-photon pumped amplification of spontaneous emission (ASE) of Zn-processed CuInS2 (CIS) QDs for the first time. The change of two-photon process caused by Zn2+ cation exchange in CIS QDs is systematically investigated. Two-photon ASE in Zn-processed CIS QDs films is achieved with a record of low threshold fluence of 5.7 mu J/cm(2). With high two-photon fluorescence quantum yields and low threshold ASE, the Zn-processed CIS QDs could become a promising candidate for two-photon bioimaging, nonlinear optical and novel QDs laser devices.
Defect-Mediated Electron-Hole Separation in One-Unit-Cell Znin2s4 Layers for Boosted Solar-Driven Co2 Reduction

Xingchen Jiao,Zongwei Chen,Xiaodong Li,Yongfu Sun,Shan Gao,Wensheng Yan,Chengming Wang,Qun Zhang,Yue Lin,Yi Luo,Yi Xie

DOI: https://doi.org/10.1021/jacs.7b02290

IF: 15

2017-01-01

Journal of the American Chemical Society

Abstract:The effect of defects on electron-hole separation is not always clear and is sometimes contradictory. Herein, we initially built clear models of two-dimensional atomic layers with tunable defect concentrations, and hence directly disclose the defect type and distribution at atomic level. As a prototype, defective one-unit-cell ZnIn2S4 atomic layers are successfully synthesized for the first time. Aberration-corrected scanning transmission electron microscopy directly manifests their distinct zinc vacancy concentrations, confirmed by positron annihilation spectrometry and electron spin resonance analysis. Density-functional calculations reveal that the presence of zinc vacancies ensures higher charge density and efficient carrier transport, verified by ultrafast photogenerated electron transfer time of ∼15 ps from the conduction band of ZnIn2S4 to the trap states. Ultrafast transient absorption spectroscopy manifests the higher zinc vacancy concentration that allows for ∼1.7-fold increase in average recovery lifetime, confirmed by surface photovoltage spectroscopy and PL spectroscopy analysis, which ensures promoted carrier separation rates. As a result, the one-unit-cell ZnIn2S4 layers with rich zinc vacancies exhibit a carbon monoxide formation rate of 33.2 μmol g-1 h-1, roughly 3.6 times higher than that of the one-unit-cell ZnIn2S4 layers with poor zinc vacancies, while the former's photocatalytic activity shows negligible loss after 24 h photocatalysis. This present work uncovers the role of defects in affecting electron-hole separation at atomic level, opening new opportunities for achieving highly efficient solar CO2 reduction performances.
Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Ke Wu,Hongxia Zhong,Quanbing Guo,Jibo Tang,Zhenyu Yang,Lihua Qian,Shengjun Yuan,Shunping Zhang,Hongxing Xu

DOI: https://doi.org/10.1002/adom.202101971

IF: 9

2022-01-01

Advanced Optical Materials

Abstract:Monolayer transition‐metal dichalcogenides grown by chemical vapor deposition (CVD) always contain certain types of defects that dramatically affect their electronic and optical properties. For CVD‐grown hexagonal WS2 monolayer, complex photoluminescence (PL) patterns are commonly observed, but the defect‐related optical mechanisms are still not well understood. Here, by combining the optical and structural characterizations and ab initio calculations, the correlation between the patterned PL emission and the details of defects in CVD‐grown hexagonal WS2 monolayer are revealed. The temperature‐dependent PL spectra show the correlation between the defect‐trapped and band‐edge exciton emission. The high‐resolution scanning transmission electron microscopy identifies the positive correlation between the density of WSx‐vacancy and PL intensity. In the end, the ab initio calculations and molecule adsorption PL spectra show that the coexistence of p‐ and n‐doping effects, caused by the W and S complex vacancy, weakens the modulation of molecular adsorption on PL intensity. This work gives new insights into the origin of the inhomogeneous PL distribution in WS2 monolayer, which provides important guidance in the regulation of electronic and optical properties of transition‐metal dichalcogenides via defect engineering.
Defect engineering for enhanced optical and photocatalytic properties of ZnS nanoparticles synthesized by hydrothermal method

E. Muhammed Jubeer,M. Aslam Manthrammel,P. A. Subha,Mohd Shkir,K. P. Biju,S. A. AlFaify

DOI: https://doi.org/10.1038/s41598-023-43735-1

IF: 4.6

2023-10-07

Scientific Reports

Abstract:Defect engineering is a promising method for improving light harvesting in photocatalytic materials like Zinc sulphide (ZnS). By altering the S/Zn molar ratio during hydrothermal processes, Zn and S defects are successfully introduced into the ZnS crystal. The band structures can be modified by adding defects to the crystal structure of ZnS samples. During the treatment process, defects are formed on the surface. XRD and Raman studies are used for the confirmation of the crystallinity and phase formation of the samples. Using an X-ray peak pattern assessment based on the Debye Scherer model, the Williamson-Hall model, and the size strain plot, it was possible to study the influence of crystal defect on the structural characteristics of ZnS nanoparticles. The band gap (E g ) values were estimated using UV–Vis diffuse spectroscopy (UV–Vis DRS) and found that the E g is reduced from 3.28 to 3.49 eV by altering the S/Zn molar ratio. Photoluminescence study (PL) shows these ZnS nanoparticles emit violet and blue radiations. In keeping with the results of XRD, TEM demonstrated the nanoscale of the prepared samples and exhibited a small agglomeration of homogenous nanoparticles. Scanning electron microscopy (SEM) was used to examine the surface morphology of the ZnS particles. Inductively Coupled Plasma Optical Emission Spectroscopy ( ICP-OES) and X-ray photoelectron spectroscopy (XPS) were used to evaluate and validate the elemental composition. XPS results indicate the presence of defects on the prepared ZnS nanoparticles. For the investigation of vacancy-dependent catalytic activity under exposure to visible light, defective ZnS with different quantities of Zn and S voids are used as catalysts. The lowest S/Zn sample, ZnS0.67 and the highest S/Zn sample, ZnS3, show superior photocatalytic activity.

multidisciplinary sciences
Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Rui Wang,Quan Liu,Sheng Dai,Chao-Ming Liu,Yue Liu,Zhao-Yuan Sun,Hui Li,Chang-Jin Zhang,Han Wang,Cheng-Yan Xu,Wen-Zhu Shao,Alfred J. Meixner,Dai Zhang,Yang Li,Liang Zhen

2023-04-27

Abstract:Defect engineering is promising to tailor the physical properties of two-dimensional (2D) semiconductors for function-oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors have not been clarified. In this work, we thoroughly studied the effect of defects on the electronic structure and optical properties of few-layer hexagonal Znln2S4 via versatile spectroscopic tools in combination with theoretical calculations. It has been demonstrated that the Zn-In anti-structural defects induce the formation of a series of donor and acceptor levels inside the bandgap, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor-acceptor pair (DAP) in Znln2S4 can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level (Ef). Furthermore, the layer-dependent dipole orientation of defect emission in Znln2S4 was directly revealed by back focal plane (BFP) imagining, where it presents obviously in-plane dipole orientation within a dozen layers thickness of Znln2S4. These unique features of defects in Znln2S4 including extrinsic absorption, rich recombination paths, gate tunability and in-plane dipole orientation will definitely benefit to the advanced orientation-functional optoelectronic applications.

Materials Science,Optics
Facile modulation of different vacancies in ZnS nanoplates for efficient solar fuel production

Pan Li,Lingju Guo,Shuangming Chen,Gan Luo,Shuang Zhu,Yanjie Wang,Li Song,Tao He

DOI: https://doi.org/10.1039/d0ta12400a

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:ZnS nanoplates with different types of defects are successfully prepared and accordingly exhibit different photocatalytic activity and selectivity for solar fuel production.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Synergistic strategy of Z-scheme heterojunction and defect engineering to construct ZnS/CoS x nanospheres for excellent photocatalytic H 2 evolution performance

Zhenqi Liu,Guangqing Zou,Heming Xu,Xuelian Wang,Xinyu Qu,Guoqiu Hou,Guimei Shi,Linmei Yang,Yuzheng Wang,Xiaolei Wang,Yingpeng Xie

DOI: https://doi.org/10.1016/j.materresbull.2024.113044

IF: 5.6

2024-08-18

Materials Research Bulletin

Abstract:The design of Z-scheme heterojunction to realize the efficient separation of charge carriers still remain challenging. Herein, the defect-assisted Z-scheme heterojunction strategy has been proposed. The binary ZnS/CoS x nanospheres were successfully prepared via a well-designed hydrothermal approach. The resultant ZnS/CoS x nanospheres with CoS x content of 5 wt% exhibit the optimal hydrogen production rate of 2546.6 μmol g −1 h −1 , which is 2.6 times higher than that of pure ZnS and superior to the most reported ZnS-based composites. The enhancement of S-vacancy concentration can greatly strengthen photocatalytic hydrogen evolution property, which can be originated from the boosted direct Z-scheme charge-transfer process in ZnS/CoS x heterostructures. The synergistic effect of direct Z-scheme heterostructures and defects engineering notably enhances the photocatalytic activity of ZnS/CoS x nanospheres, which could provide a deep insight for the design and synthesis of new types of photocatalysts.

materials science, multidisciplinary
Effect of surface defect states on Zn(1−x)CdxS for enhanced photocatalytic hydrogen evolution

Siying Du,Liuyun Chen,Chengzheng Men,Hongbing Ji,Tongming Su,Zuzeng Qin

DOI: https://doi.org/10.1016/j.jallcom.2023.170265

IF: 6.2

2023-09-01

Journal of Alloys and Compounds

Abstract:Photocatalytic H2 production using solar energy has received great attention, but suffers from low photocatalytic efficiency. Herein, Zn(1−x)CdxS solid solution with different Zn/Cd molar ratio was synthesized by a solvothermal method, and tested for photocatalytic H2 production from water. The bandgap, charge carrier separation efficiency and surface defect states of the Zn(1−x)CdxS can be adjusted by altering the Zn/Cd molar ratio. The separation efficiency of photogenerated electrons and holes was greatly enhanced with the Zn/Cd molar ratio of 0.8:0.2. Moreover, the Zn0.8Cd0.2S exposed most surface defect states compared to those of other Zn(1−x)CdxS, which can be act as electron pools and active sites for improving photocatalytic H2 production. Therefore, when the molar ratio of Zn/Cd is 0.8:0.2, the Zn0.8Cd0.2S exhibited the best performance for photocatalytic H2 production with the H2 production rate of 7.71 mmol·g-1·h-1, which is much higher than that of ZnS (17 μmol·g-1·h-1) and CdS (5.37 μmol·g-1·h-1). This work provides an in-depth understanding of the surface defect states for enhancing the photocatalytic H2 production.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Tailoring defects in In2S3/Zn0.3Cd0.7S heterojunctions for efficient photocatalytic CO2 conversion

Jiafang Liu,Yangyang Liu,Li Li,Xiangju Ye,Xiuzhen Zheng,Lili Pan,Wei Ren,Sugang Meng,Sujuan Zhang,Shifu Chen

DOI: https://doi.org/10.1016/j.apsusc.2023.157524

IF: 6.7

2023-09-01

Applied Surface Science

Abstract:Defect engineering is a highly effective approach to regulate the electronic structure of the catalyst surface, widely employed in the field of photocatalytic energy conversion. In this study, we have successfully synthesized a novel dual-defective In2S3/Zn0.3Cd0.7S (IS/ZCS) heterojunction structure via a self-assembly method, composed of Zn-vacancy-rich Zn0.3Cd0.7S (ZCS) and S-vacancy-rich In2S3 (IS). Under visible light illumination, 3% IS/ZCS sample exhibits remarkable photocatalytic performance in the synergistic reaction of CO2 reduction and 4-chlorobenzyl alcohol (Cl-PhCH2OH) oxidation with the CO yield significantly improved by a factor of 3.5 and 51 compared to that of ZCS and IS, respectively. The combined experimental data and theoretical calculations demonstrate that the dual-defective structure and Z-scheme transfer mode are the key factors behind the enhanced photocatalytic activity, providing more active sites and effectively improving the utilization of photogenerated charge carriers (PCCs). Moreover, the reaction pathway and catalytic mechanism of photocatalytic CO2 reduction were elucidated by the in-situ FTIR technique combined with DFT calculations, monitoring the intermediate and final products during the reaction period. Our results provide a powerful example of designing novel heterojunction photocatalysts with high activity and accelerating the separation of PCCs, with broad implications for the development of efficient photocatalytic systems.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Probing Defects in ZnO by Persistent Phosphorescence

Honggang Ye,Zhicheng Su,Fei Tang,Yitian Bao,Xiangzhou Lao,Guangde Chen,Jian Wang,Shijie Xu

DOI: https://doi.org/10.29026/oea.2018.180011

IF: 8.9329

2018-01-01

Opto-Electronic Advances

Abstract:Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.267 eV) in intentionally undoped ZnO single crystal by selecting the below-band-gap (BBG) optical excitations (e.g. light wavelengths of 385 nm and 450 nm). Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange luminescence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.
Controllable construction of direct Z-scheme Mo2C-CdxZn1−xIn2S4 heterojunction via defect-mediated modulation for enhanced visible-light photocatalysis

Haifeng Lin,Siying Li,Xue Sui,Jinxiao Gao,Hui Wang,Jixiang Xu,Yanyan Li,Lei Wang

DOI: https://doi.org/10.1016/j.jallcom.2023.173049

IF: 6.2

2024-03-01

Journal of Alloys and Compounds

Abstract:Direct Z-scheme semiconductor heterostructures possess fascinating merits for solar photocatalysis, including increased light harvesting, spatially isolated photogenerated charge carriers, and well-preserved strong redox capability. However, steering Z-scheme charge transfer of semiconductor heterojunction in a controllable manner is still a challenging task. In this work, unique direct Z-scheme Mo2C-CdxZn1−xIn2S4 heterojunction is constructed via a defect-mediated modulating strategy, where Cd-doping switches the charge transfer mode of Mo2C-CdxZn1−xIn2S4 heterojunction from type-I to Z-scheme through increasing S vacancies, up-shifting conduction band level, and narrowing bandgap of CdxZn1−xIn2S4 component. Moreover, the defect-induced Mo-S bond affords fast channels for built-in electric field-induced Z-scheme photo-electrons transporting from Mo2C conduction band to CdxZn1−xIn2S4 valence band, supporting by X-ray photoelectron spectroscopy, surface photovoltage spectroscopy, and radical testing results. Noticeably, under irradiation of visible light (λ > 400 nm), Mo2C-CdxZn1−xIn2S4 Z-scheme heterojunction displays an excellent and stable photocatalytic H2-evolving activity, reaching an outstanding H2 generation rate of 28.12 mmol·g−1·h−1 with the corresponding high apparent quantum efficiency of 21.1% at 400 nm, far surpassing that of Pt-loaded C0.25ZIS and most documented ZnIn2S4-containing photocatalysts. The present work could inspire the crafty design of efficient Z-scheme photocatalysts through defect-mediated heterostructure construction and energy band engineering.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Surface Energy Mediated Sulfur Vacancy of ZnIn2S4 Atomic Layers for Photocatalytic H2O2 Production

Kailian Zhang,Meng Dan,Jingfei Yang,Fengxiu Wu,Leigang Wang,Hua Tang,Zhao‐Qing Liu

DOI: https://doi.org/10.1002/adfm.202302964

IF: 19

2023-05-16

Advanced Functional Materials

Abstract:The ZnIn2S4 atomic layer with rich defect active sits is designed and prepared by a simple hydrothermal method. The relationship between surface energy and defects is investigated by density functional theory calculation and experiment, indicating that the controllable defects can be constructed by tuning surface energy. As the rich active site, S defect played a very important role in charge density and effective carrier transport during the photocatalytic H2O2 production. Constructing rich defect active site structure for material design is still a great challenge. Herein, a simple surface engineering strategy is demonstrated to construct one‐unit‐cell ZnIn2S4 atomic layers with the modulated surface energy of S vacancy. Rich surface energy can regulate and control the rich S vacancy, which ensures rich active sites, higher charge density and effective carrier transport. As a result, the ZnIn2S4 atomic layers with rich surface energy affords an obvious enhancement in H2O2 productive rate of 1592.04 μmol g−1 h−1, roughly 14.58 times superior to that with poor surface energy. Moreover, the in situ infrared diffuse reflection spectrum indicates that S vacancy as the oxygen reduction reaction active site is responsible for the critical intermediate *O2− and *OOH, corresponding to two‐electron oxygen reduction reaction. This study provides a valuable insight and guidance for constructing controllably defects to achieve highly efficient H2O2 production.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Synthesis, optical and photocatalysis property of corn-like ZnO/ZnS heterojunction with a certain lattice defects

Lei Yang,Lifang Zhou,Chunshui Hong,Wencai Zhu,Shihua Zhao

DOI: https://doi.org/10.1063/5.0175919

IF: 4.304

2023-12-01

The Journal of Chemical Physics

Abstract:In order to greatly improve the photocatalytic properties, corn-like ZnO/ZnS heterojunctions with a particle size of about 60–71 nm have been synthesized by the solvothermal method and the subsequent sulfuration process. A declining trend is found for the specific surface area with increasing sulfuration time. The corn-like ZnO/ZnS heterojunctions exhibit good photocatalytic properties. With increasing sulfuration time, the degradation rate increases first and then decreases. The best degradation rate is observed for the heterojunction sulfurated for 90 min. The strong broad luminescence band is extremely beneficial to the absorption of visible light by multiphoton process. In addition, the energy transfer from ZnS to ZnO contributes to charge separation, forming a type-II heterojunction mechanism. After one cycle of photocatalytic process, except that corns become more broken, variation of particle size and shape is very small. The degradation speed of RhB after a second cycle of photocatalytic process is slower than the first one except when using the sample sulfurated for 360 min.

chemistry, physical,physics, atomic, molecular & chemical
Defect-mediated Fermi level modulation boosting photo-activity of spatially-ordered S-scheme heterojunction

Haifeng Lin,Xinxin Xin,Lei Xu,Ping Li,Dehong Chen,Volodymyr Turkevych,Yanyan Li,Hui Wang,Jixiang Xu,Lei Wang

DOI: https://doi.org/10.1016/j.jcis.2024.07.099

2024-12-15

Abstract:Spatially-ordered S-scheme photocatalysts are intriguing due to their enhanced light harvesting, spatially isolated redox sites, and strong redox abilities. Nonetheless, heightening the performance of S-scheme photocatalysts via controllable defect engineering is still challenging to now. In this work, multi-armed MoSe2/CdS S-scheme heterojunction with intimate Mo-S bond coupling and adjustable Se vacancies (VSe) and Mo5+ concentrations was constructed, which consisted of few- or even single-layered MoSe2 growing on the {11-20} facets of wurtzite CdS arms. The S-scheme charge transmission mechanism of MoSe2/CdS heterojunction was validated by density functional theory calculation combined with in situ photo-irradiated X-ray photoelectron spectroscopy, surface photovoltage, and radical measurements. Moreover, the Fermi level gap between CdS and MoSe2 was enlarged by regulating the contents of donor (VSe) and acceptor (Mo5+) impurities with synthesis temperature, which strengthens the built-in electric field and carriers transfer driving force of MoSe2/CdS composites, contributing to an outstanding H2 evolution activity of 52.62 mmol·g-1·h-1 (corresponding to an apparent quantum efficiency of 34.8 % at 400 nm) under visible-light irradiation (λ > 400 nm), 25.8 times that of Pt-loaded CdS counterpart and a substantial amount of reported CdS-containing photocatalysts. Our study results are anticipated to facilitate the rational design of advanced semiconductor nanostructures for efficient solar conversion and utilization.
Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Qilong Cui,Ziyu Luo,Qirui Cui,Wen Zhu,Hongwei Shou,Chuanqiang Wu,Zhanfeng Liu,Yunxiang Lin,Pengjun Zhang,Shiqiang Wei,Hongxin Yang,Shuangming Chen,Anlian Pan,Li Song

DOI: https://doi.org/10.1002/adfm.202105339

IF: 19

2021-01-01

Advanced Functional Materials

Abstract:The photoluminescence quantum yield (PLQY) of the chemical vapor deposition (CVD) grown transition-metal dichalcogenides (TMDs) films is often much lower than their mechanically exfoliated counterparts, making the coexistence of large-area and high PLQY in TMDs monolayer a huge challenge. Here, an in situ defect engineering strategy is reported to fundamentally dilutes the impact of intrinsic sulfur vacancy on tungsten disulfide (WS2) monolayer. By ingeniously incorporating oxygen atoms in the sulfur vacancy sites of WS2 lattice via the CVD method, oxygen doped WS2 monolayer exhibits remarkably improved optical properties. The PLQY is uniformly enhanced by nearly two orders and can reach up to 9.3%, which is even higher than mechanically exfoliated counterparts. Besides, strong W-O bonds endow materials with superior environment stability, and the high PLQY could persist with an endurance of up to 3 months under ambient conditions without any protection. More in-depth insights from the first-principle calculations illustrate that the enhancement mechanism is the synthetic action of the suppression of nonradiative recombination and conversion from trion to neutral, and the excellent stability arises from repaired saturated coordination bonds at sulfur vacancy sites. This method opens up more possibilities for both fundamental exciton physics and optoelectronics applications.

A straightforward one-pot approach to two new defect energy levels in ZnS

Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

Defect energy levels and persistent luminescence in Cu-doped ZnS

Defect-Related White-Light Emission from Zno in an N-Mg0.2zn0.8o/N-Zno/Sio (X) Heterostructure on N-Si

New energy with ZnS: novel applications for a standard transparent compound

Enhancement of Two-Photon Fluorescence and Low Threshold Amplification of Spontaneous Emission of Zn-processed CuInS2 Quantum Dots

Defect-Mediated Electron-Hole Separation in One-Unit-Cell Znin2s4 Layers for Boosted Solar-Driven Co2 Reduction

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Defect engineering for enhanced optical and photocatalytic properties of ZnS nanoparticles synthesized by hydrothermal method

Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Facile modulation of different vacancies in ZnS nanoplates for efficient solar fuel production

Synergistic strategy of Z-scheme heterojunction and defect engineering to construct ZnS/CoS x nanospheres for excellent photocatalytic H 2 evolution performance

Effect of surface defect states on Zn(1−x)CdxS for enhanced photocatalytic hydrogen evolution

Tailoring defects in In2S3/Zn0.3Cd0.7S heterojunctions for efficient photocatalytic CO2 conversion

Probing Defects in ZnO by Persistent Phosphorescence

Controllable construction of direct Z-scheme Mo2C-CdxZn1−xIn2S4 heterojunction via defect-mediated modulation for enhanced visible-light photocatalysis

Surface Energy Mediated Sulfur Vacancy of ZnIn2S4 Atomic Layers for Photocatalytic H2O2 Production

Synthesis, optical and photocatalysis property of corn-like ZnO/ZnS heterojunction with a certain lattice defects

Defect-mediated Fermi level modulation boosting photo-activity of spatially-ordered S-scheme heterojunction

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering