Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors
Yuhang Guan,Yuqing Zhang,Jinxiong Li,Jiye Li,Yuhan Zhang,Zhenhui Wang,Yuancan Ding,Mansun Chan,Xinwei Wang,Lei Lu,Shengdong Zhang
DOI: https://doi.org/10.1016/j.apsusc.2023.157177
IF: 6.7
2023-04-08
Applied Surface Science
Abstract:In recent years, high- k gate dielectrics have attracted increasing attention in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs), due to the urge for stronger gate controllability in advanced applications of high integration density. In this work, the ultra-thin top-gate insulator of atomic-layer-deposited (ALD) HfO x was developed for the amorphous indium-gallium-zinc oxide (a-IGZO) TFTs. Despite the good electrical characteristics of the 4-nm HfO x -gated a-IGZO transistor, its reliability is considerably poor and ascribed to the abundant interface defects, for example, oxygen vacancies. The interface reaction between HfO x and a-IGZO during the ALD process is clarified to be responsible for such defect generation. To prevent the oxygen-related reaction, the a-IGZO channel is pre-treated using the strong oxidizing plasma, contributing to significantly enhanced electrical stabilities. However, the further thinner HfO x would readily increase the gate leakage current, since the electron can easily tunnel through the ultra-thin HfO x due to the low conduction band offset between HfO x and AOS. The 4-nm ALD HfO x together with the pre-oxidization contributes to the optimal performance and stability of top-gate a-IGZO TFT.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films