Abstract:Bismuth (Bi) has a stronger bond dissociation energy to the oxygen atom (337.2 kJ mol ‐1 ) than indium (320.1 kJ mol ‐1 ) and zinc (159.0 kJ mol ‐1 ) [1]. Therefore, Bi can serve as a carrier suppressor for indium zinc oxide (IZO). In this work, bottom‐gate amorphous Bi doped IZO thin film transistors (a‐IZBO TFTs) were fabricated by means of radio‐frequency magnetron sputtering. During the deposition, pure Ar gas with a fixed flow rate of 30 sccm was introduced into the chamber and the sputtering pressure was maintained at 0.4 Pa. Effects of experimental variables including channel layer thickness (8, 30 and 38 nm) and sputtering power (30, 50, 70 and 90 W) on the performances of a‐IZBO TFTs were investigated. It is found that channel layer thickness has strong impacts on the threshold voltage (V th ) and subthreshold swing (S.S.) of a‐IZBO TFTs. With increasing channel layer thickness, V th shifts to the negative direction, while S.S value decreases first and then increases. Increasing sputtering power also leads to the negative shift of V th . As sputtering power increases from 30 to 70 W, field effect mobility (µ FE ) increases from 18.2 to 25.4 cm 2 V ‐1 s ‐1 . However, at higher sputtering power, µ FE decreases to 19.6 cm 2 V ‐1 s ‐1 . As a result, the optimum a‐IZBO TFTs were obtained with channel layer thickness of 30 nm and sputtering power of 70 W.

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten Doping

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Investigation of Bismuth Doped Indium-Zinc-Oxide Thin Film Transistors

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Effects of Hf Incorporation on Indium Zinc Oxide Thin-Film Transistors Using Solution Process

P‐5.4: Processing Effects on the Performances of Indium Zinc Bismuth Oxide Thin Film Transistors

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Zirconium-aluminum co-doping on solution-processed indium oxide thin film and deceives measured by a novel nondestructive method

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Influences of Channel Metallic Composition on Indium Zinc Oxide Thin-Film Transistor Performance