Abstract:The effect of nitrogen-doping (N-doping) in an indium-gallium-zinc oxide (IGZO) channel layer on the analog, linear, and reversible drain current modulation in the thin-film transistors (TFTs) with Al-top-gate/SiOx/TaOx/IGZO stack is investigated for the potential application to artificial synaptic devices. The N-doped devices exhibit a more linear increase of drain current upon repeating positive gate biasing corresponding to synaptic potentiation, while the undoped device shows a highly non-linear and abrupt increase of drain current. Distinct from the increase of drain current at positive biasing for potentiation, the decrease of drain current for depression behavior at negative biasing is found to be the same. Whereas the increase of drain current becomes more linear, the channel conductance, magnitude of its change, and its changing speed are decreased by the N-doping. The partial replacement of oxygen with nitrogen having higher binding energy with metal-cations suppresses oxygen vacancy formation, then decreases the channel conductance. It also retards the migration of oxygen ions, then leads to a linear increase of drain current. These results reveal that the characteristics of tunable drain current such as its linearity, dynamic range, and speed could be controlled by altering internal state of IGZO channel, which is crucial for the application to artificial synapse for neuromorphic system.

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

Effect of Nitrogen Doping on Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Investigation of Bismuth Doped Indium-Zinc-Oxide Thin Film Transistors

The Influence of Nitrogen Implantation on the Electrical Properties of Amorphous IGZO

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

P‐5.4: Processing Effects on the Performances of Indium Zinc Bismuth Oxide Thin Film Transistors

Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors

Silicon Doping and N2 Annealing Effects on Zn3N2 Thin Film Transistors

Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor

Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors

Mist CVD deposited amorphous InSnZnO thin films with different nitrogen/oxygen ratios carrier gases and their applications to thin-film transistors