Abstract:The effect of nitrogen-doping (N-doping) in an indium-gallium-zinc oxide (IGZO) channel layer on the analog, linear, and reversible drain current modulation in the thin-film transistors (TFTs) with Al-top-gate/SiOx/TaOx/IGZO stack is investigated for the potential application to artificial synaptic devices. The N-doped devices exhibit a more linear increase of drain current upon repeating positive gate biasing corresponding to synaptic potentiation, while the undoped device shows a highly non-linear and abrupt increase of drain current. Distinct from the increase of drain current at positive biasing for potentiation, the decrease of drain current for depression behavior at negative biasing is found to be the same. Whereas the increase of drain current becomes more linear, the channel conductance, magnitude of its change, and its changing speed are decreased by the N-doping. The partial replacement of oxygen with nitrogen having higher binding energy with metal-cations suppresses oxygen vacancy formation, then decreases the channel conductance. It also retards the migration of oxygen ions, then leads to a linear increase of drain current. These results reveal that the characteristics of tunable drain current such as its linearity, dynamic range, and speed could be controlled by altering internal state of IGZO channel, which is crucial for the application to artificial synapse for neuromorphic system.

Effect of Nitrogen Doping on Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

Enhanced Thermal Stability of Elevated-Metal Metal-Oxide Thin-Film Transistors via Low-Temperature Nitrogen Post-Annealing

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors

Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors

Enhanced Negative‐Bias Illumination Temperature Stability of Praseodymium‐Doped InGaO Thin‐Film Transistors

P-19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor

Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Effects of Sn Doping on the Electrical Performance and Stability of Sub-V Operating Metal-Oxide Thin-Film Transistors Fabricated by Oxygen Annealing

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric