Abstract:This study investigates the effect of oxygen plasma treatment on the surface morphology, electrical properties, and stability of amorphous graphene quantum dots (GQDs)-modulated InGaZnO (IGZO) thin-film transistors (TFTs) prepared by all-solution method. The weak threshold voltage shifts ( of the oxygen plasma-treated GQDs-IGZO TFTs under positive bias stress (PBS), negative bias stress (NBS), positive bias illumination stress (PBIS), and negative bias illumination stress (NBIS) show a significant improvement of the bias-induced instability. Based on the energy band diagrams, this work demonstrates that O and H2O+ are formed in the back channel under PBS and NBS conditions in addition to ionized oxygen vacancy (V defects at the GQDs–IGZO/ZrOx interface, leading to the gate bias instability, which can be effectively suppressed by the oxygen plasma treatment to improve the stability of the device. From the experimental results, it can be seen that the electrical properties, such as field effect mobility ( , on-/off-current ratio ( / , and subthreshold fluctuations, are significantly improved by the passivation of interfacial trap density and bulk trap defects by oxygen plasma treatment. To confirm the potential applications of IGZO-TFTs in logic circuits, inverter based on GQDs-IGZO/ZrOx has been integrated, demonstrating good dynamic response characteristics and narrow transition width. Low-frequency noise (LFN) analyses of TFTs have revealed that mobility fluctuations are the main source of noise. As a result, it can be concluded that the facile oxygen plasma treatment strategy is a promising technique to optimize device performance and has demonstrated potential applications in preparing GQDs-IGZO TFTs with high performance.

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

Development and Analysis of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience

Chemical Bonds in Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Enhancement of Bias and Illumination Stability in Thin-Film Transistors by Doping InZnO with Wide-Band-gap Ta2O5

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers

P‐18: Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors Capped with Molybdenum‐Doped ZnO Ultraviolet‐Shield Layers