Abstract:Lanthanide‐doped indium zinc oxide (Ln‐IZO) was employed as the active channel layer (ACT) of thin film transistors (TFTs). The, Ln‐IZO, single‐1 ACT‐based TFT exhibited a high mobility and a small threshold voltage shift (∆VTH) within −1 V after 1‐hour negative bias temperature illumination stress (NBTIS). However, the corresponding ∆ VTH of 1‐hour positive bias temperature stress (PBTS) was as large as over 8 V. Optimized stacked structures of the ACT were adopted and obtained a significantly improved stability of PBTS. TFTs based on double‐2 ACT (Ln‐IZO/IGZO‐1) and triple‐2 ACT (Ln‐IZO/IGZO‐1/IGZO‐2) exhibited significantly lower ∆VTHs of 1.79 and 1.62 V under PBTS, respectively. Meanwhile, the excellent NBTIS stability with ∆VTH within −1 V was maintained for both double‐2‐ and triple‐2‐based TFTs. Furthermore, an appreciated VTH uniformity was obtained for triple‐2‐based TFTs, with a narrow range width of only 0.5 V. At the same time, we proposed a PBTS fitting model, using the stretched power‐law function, ∆ VTH = kTr for the deterioration of Ln‐oxide TFTs under long‐term operation. According to the proposed model, the ∆VTH could be maintained within 6 V even after 200‐hour PBTS for TFT based on triple‐2.

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

P-19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Effect of Nitrogen Doping on Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors