Abstract:We present a dual active layer structure composed of indium–zinc oxide (InZnO) and indium–magnesium–zinc oxide (InMgZnO), which is fabricated using a simple solution process. By utilizing a heterojunction structure, combined with the high mobility of the front channel (InZnO) and the low ${\mathrm{\scriptstyle OFF}}$ -state current of the back channel (InMgZnO), we are able to achieve thin-film transistor (TFT) devices with enhanced performance and greater stability. Finally, we are able to optimize the device by optimizing the front channel thickness and treating the heterojunction interface with oxygen plasma, achieving a mobility ( $\mu _{\text {sat}}$ ) of 5.94 cm2/( $\text {V}\cdot \text {s}$ ), a threshold voltage of 0.98 V, an ${I} _{ { {\text {ON}}}}/{I} _{ { {\text {OFF}}}}$ ratio of $7.49\times 10^{{8}}$ , and a subthreshold swing (SS) of 325 mV/decade. Furthermore, the device maintains almost unchanged hysteresis voltage and exhibits high bias stability, which is demonstrated by the minimal threshold voltage variation of only 0.27 and −0.21 V under positive gate bias (PBS) and negative gate bias (NBS) for 1 h, respectively. The high electrical performance and stability of heterojunction TFTs can be attributed to the reduced interfacial defect state achieved through oxygen plasma treatment, as well as the electron redistribution occurring at the heterojunction interface.

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors

Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

High performance IZO:P/IZO:Ni thin film transistor with double active layers

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Influence of Channel Layer Thickness on the Stability of Amorphous Indium Zinc Oxide Thin Film Transistors

Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Influence of Channel Layer and Passivation Layer on the Stability of Amorphous InGaZnO Thin Film Transistors.

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

Thin-Film Transistors with Neodymium-Incorporated Indium–Zinc-Oxide Semiconductors

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT