Abstract:We present a dual active layer structure composed of indium–zinc oxide (InZnO) and indium–magnesium–zinc oxide (InMgZnO), which is fabricated using a simple solution process. By utilizing a heterojunction structure, combined with the high mobility of the front channel (InZnO) and the low ${\mathrm{\scriptstyle OFF}}$ -state current of the back channel (InMgZnO), we are able to achieve thin-film transistor (TFT) devices with enhanced performance and greater stability. Finally, we are able to optimize the device by optimizing the front channel thickness and treating the heterojunction interface with oxygen plasma, achieving a mobility ( $\mu _{\text {sat}}$ ) of 5.94 cm2/( $\text {V}\cdot \text {s}$ ), a threshold voltage of 0.98 V, an ${I} _{ { {\text {ON}}}}/{I} _{ { {\text {OFF}}}}$ ratio of $7.49\times 10^{{8}}$ , and a subthreshold swing (SS) of 325 mV/decade. Furthermore, the device maintains almost unchanged hysteresis voltage and exhibits high bias stability, which is demonstrated by the minimal threshold voltage variation of only 0.27 and −0.21 V under positive gate bias (PBS) and negative gate bias (NBS) for 1 h, respectively. The high electrical performance and stability of heterojunction TFTs can be attributed to the reduced interfacial defect state achieved through oxygen plasma treatment, as well as the electron redistribution occurring at the heterojunction interface.

Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer

Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors

Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer

High-performance dual-layer channel ITO/TZO TFTs fabricated on glass substrate

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Fabrication and performance of indium oxide based transparent thin film transistors

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

Enhancement in Performance and Reliability of Transparent IGZO Thin-Film Transistors by ITO/Ti Stacked Source/Drain Contacts

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

High-Performance Mo-Zn-O Oxide Transistors with Double Channels

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer