Abstract:Bismuth (Bi) has a stronger bond dissociation energy to the oxygen atom (337.2 kJ mol ‐1 ) than indium (320.1 kJ mol ‐1 ) and zinc (159.0 kJ mol ‐1 ) [1]. Therefore, Bi can serve as a carrier suppressor for indium zinc oxide (IZO). In this work, bottom‐gate amorphous Bi doped IZO thin film transistors (a‐IZBO TFTs) were fabricated by means of radio‐frequency magnetron sputtering. During the deposition, pure Ar gas with a fixed flow rate of 30 sccm was introduced into the chamber and the sputtering pressure was maintained at 0.4 Pa. Effects of experimental variables including channel layer thickness (8, 30 and 38 nm) and sputtering power (30, 50, 70 and 90 W) on the performances of a‐IZBO TFTs were investigated. It is found that channel layer thickness has strong impacts on the threshold voltage (V th ) and subthreshold swing (S.S.) of a‐IZBO TFTs. With increasing channel layer thickness, V th shifts to the negative direction, while S.S value decreases first and then increases. Increasing sputtering power also leads to the negative shift of V th . As sputtering power increases from 30 to 70 W, field effect mobility (µ FE ) increases from 18.2 to 25.4 cm 2 V ‐1 s ‐1 . However, at higher sputtering power, µ FE decreases to 19.6 cm 2 V ‐1 s ‐1 . As a result, the optimum a‐IZBO TFTs were obtained with channel layer thickness of 30 nm and sputtering power of 70 W.

Influences of Channel Metallic Composition on Indium Zinc Oxide Thin-Film Transistor Performance

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Fabrication and performance of indium oxide based transparent thin film transistors

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

P‐5.4: Processing Effects on the Performances of Indium Zinc Bismuth Oxide Thin Film Transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Study of zinc tin oxide thin-film transistor

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Enhancement of Electrical Performance in In2o3 Thin-Film Transistors by Improving the Densification and Surface Morphology of Channel Layers

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Study of Ti Addition in Channel Layers for In–Zn–O Thin Film Transistors

Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors

The Influence of Channel Layer Thickness on the Electrical Properties of Zno Tfts

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors