Abstract:Abstract We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 °C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 °C show reasonable carrier mobility ( μ FE ) and on/off current ratio ( I ON/OFF ) values of 22.4–35.9 cm 2 V −1 s −1 and 1.0–4.0 × 10 8 , respectively. However, their device instabilities against positive/negative gate bias stresses (PBS/NBS) are unacceptable, originating from unsaturated bonding and disordered sites in the metal oxide films. In contrast, the 19-nm-thick annealed IZTO films included highly-crystalline, 2D spherulitic crystallites and fewer grain boundaries. These films show the highest μ FE value of 39.2 cm 2 V −1 s −1 in the transistor as well as an excellent I ON/OFF value of 9.7 × 10 8 . Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. This promising superior performance is attributed to the crystallization-induced lattice ordering, as determined by highly-crystalline structures and the associated formation of discrete donor levels (~ 0.31 eV) below the conduction band edge.

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

MILC Thin Film Transistor with Ultra-Thin Channel

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film Transistors

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Mechanism of Metal Induced Lateral Crystallization

Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films

Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film

Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Enhanced Electrical Stability of Thin Film Transistors Based on Nanocrystalline Silicon Films

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Comparative study of large grains and high-performance TFTs in low-temperature crystallized LPCVD and APCVD amorphous silicon films

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor