Abstract:As thermal management in 3DIC integration becomes increasingly important in advanced semiconductor node processes, novel experimental and modeling approaches are in great demand to reveal the critical material issues involving multiscale microstructures that govern the behavior of through-silicon-via (TSV) protrusion. Here, a coarse-grained phase-field crystal model properly coupled with mechanics through the atomic density field is used to simulate the formation of polycrystalline structures and protrusion of nano-TSVs from the atomic scale. TSVs with different grain structures are directly loaded, and protrusion/intrusion profiles are obtained along with displacement, stress, and strain fields. Thermodynamic driving forces from external loadings and the mismatch of Young’s modulus between adjoining grains as well as detailed displacement and strain distributions are ascribed to control the complex deformation in TSVs. TSVs with sizes up to around 30 nm and an aspect ratio of 4 are successfully investigated, and a further increase in the size and aspect ratio to cover the micrometer range is feasible, which lays down a solid basis toward a multiscale material database for simulation inputs to the design of TSV-based 3DIC integration and relevant electronic design automation (EDA) tools.

A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film

A Unified Predictive TFT Model with Capability for Statistical Simulation

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

MILC Thin Film Transistor with Ultra-Thin Channel

A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries

An All-Region BSIM Thin-Film Transistor Model for Display and BEOL 3-D Integration Applications

Direct Current Model of Polysilicon Thin Film Transistor Based on Discrete Grain Boundary Distribution

A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

A physics-based charge sheet model of polysilicon thin film transistors for circuit simulation

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method

9‐2: Compact Model for Thin‐Film Transistors with Capacitance Frequency Dispersion

A Simple Model of DIGBL Effect for Polysilicon Films and Polysilicon Thin-Film Transistors

Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs

Fabrication of High Performance Low-Temperature Poly-Si Thin-Film Transistors Using A Modulated Process

Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model

An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

A new analytical threshold voltage model for the doped polysilicon thin-film transistors

Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile