Abstract:Equipped with a two-dimensional topological structure, a group of masses, springs and dampers can be demonstrated to model the internal dynamics of a thin-film transistor (TFT). In this paper, the two-dimensional Mass-Spring-Damper (MSD) representation of an inverted staggered TFT is proposed to explore the TFT's internal stress/strain distributions, and the stress-induced effects on TFT's electrical characteristics. The 2DMSD model is composed of a finite but massive number of interconnected cellular units. The parameters, such as mass, stiffness, and damping ratios, of each cellular unit are approximated from constitutive equations of the compositematerials, while the electrical properties of the inverted staggered TFT are characterized by utilizing an electro-mechanical coupling relation derived from the quantum mechanics. TFTs are often used in biomedical sensors/transducers attached to human skins, and, for the purpose of simulation and validation, the boundary conditions on the interface between the TFT and the human skin were modeled as a spatially distributed sinusoidal excitation with a frequency of 50 Hz, assuming the TFT thickness is more than tens of microns. The fidelity of the 2D MSD structure in the modeling of an inverted staggered TFT is verified by comparing its simulated total displacement fieldwith that of a finite element analysis (FEA) model. The advantages of the MSD model include a dramatic reduction in memory use by up to 60% and faster computation times that are up to 80% lower. More importantly, the MSD model is better suited than FEA to many problems in accurate tissue modeling for medical applications, for which FEA is becoming a bottleneck. This work develops a novel modeling approach, which can be extended to other types of flexible thin film transistors.

Research and Modeling Kink Effect in Poly-Si Thin Film Transistors

A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film

Floating-body kink-effect-related parasitic bipolar transistor behavior in poly-Si TFT

A Unified Predictive TFT Model with Capability for Statistical Simulation

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors

An Improved ASM-HEMT Model for Kink Effect on GaN Devices

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

A Physics-Oriented Model of Cryogenic MOSFETs Including the Subthreshold Kink Effects

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Modeling of an Internal Stress and Strain Distribution of an Inverted Staggered Thin-Film Transistor Based on Two-Dimensional Mass-Spring-Damper Structure

Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-layer Thin Film Transistors

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure

The Effect of Kink and Vertical Leakage Mechanisms in GaN-on-Si Epitaxial Layers

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models

Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield

Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs