Abstract:In this paper, a reliability analysis of symmetric Vertical-channel Ni-SAlicided poly-Si thin-film transistors (VSA-TFTs) is performed for the first time. First, we compare the drain-induced barrier-lowering effect (DIBL) of VSA-TFTs. The VSA-TFTs with thinner gate oxide thickness, an offset structure, and a longer floating $\hbox{n}^{+}$ region have better immunity to DIBL. Second, VSA-TFTs with a longer floating $\hbox{n}^{+}$ region also have better immunity under hot-carrier (HC) stress and self-heating (SH) stress. However, VSA-TFTs with a shorter floating $\hbox{n}^{+}$ region also have better immunity to positive gate bias (PGB) stress. Consequently, in order to optimize reliability characteristics, including SH stress, HC stress, and PGB stress, it is necessary to modulate the length of the floating $\hbox{n}^{+}$ region. Third, the PGB stress, rather than SH stress or HC stress, becomes a major issue for VSA-TFTs under the stress bias below 4 V. In other words, PGB stress will dominate the degradation behaviors when the stress bias is not high enough to achieve SH stress and HC stress. Finally, the worst degradation condition of VSA-TFTs under HC stress, similar to that of most TFT devices, occurs when the stress of $V_{G}$ is less than half of $V_{D}$.

Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors

Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Reliability Analysis of Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Direct Current Model of Polysilicon Thin Film Transistor Based on Discrete Grain Boundary Distribution

A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

Highly-Doped Region Optimization for Reduced Hot-Carrier Effects in Dual-Gate Low Temperature Polysilicon TFTs

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

A physics-based charge sheet model of polysilicon thin film transistors for circuit simulation

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs

Modeling of Degradation Caused by Channel Hot Carrier and Negative Bias Temperature Instability Effects in P-Mosfets

Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation

Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

Characterization and Modelling of Hot Carrier Degradation in Pfets under Vd>Vg Condition for Sub-20Nm DRAM Technologies.

Modelling the Threshold-Voltage Shift of Polymer Thin-Film Transistors under Constant and Variable Gate-Bias Stresses

A new analytical threshold voltage model for the doped polysilicon thin-film transistors