Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Characterization and Modelling of Hot Carrier Degradation in Pfets under Vd>Vg Condition for Sub-20Nm DRAM Technologies.

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

Research of Hot-carrier-induced Degradation on SOI NLIGBT

On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage

Understanding Hot Carrier Degradation and Variation in FinFET Technology

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection

Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Mechanism Study of Hot Carrier Degradation Recovery by Gate Induced Drain Leakage in 14nm N FinFET

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique

Modeling of Degradation Caused by Channel Hot Carrier and Negative Bias Temperature Instability Effects in P-Mosfets

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects