Abstract:The work is focused on the analysis of thermomechanical stresses in silicon during pulse current heating of interconnections which were exposed to single current pulses with a duration of up to 250 μs and a current density amplitude of up to 2 × 10 11 A/m 2 . When modeling thermal "loads", film conductors on silicon with a thickness of up to 3 μm and a width of 10–75 μm were considered. Based on the experimental oscillograms taken from sections of the test structures during the passage of a current pulse and the calculation performed, the maximum temperatures on the silicon surface near the thermal shock source were determined. It has been experimentally revealed that the passage of current pulses with an amplitude of 2 × 10 11 A/m 2 and a duration of up to 250 μs leads to thermal destruction of interconnects and contributes to the formation of plastic deformation regions in the near-surface layer of silicon. It was revealed that with a decrease in the track width, the nature of the melting of the film conductor does not change. It was also established that a significantly higher specific energy is required to melt narrower tracks. The analysis of the maximum temperature gradients identified the places of the most probable cracking. The formation of cracks in the near-surface layer of a semiconductor at a depth of 2.5 μm after the passage of a single current pulse was experimentally detected. An assessment was made of the magnitude of mechanical stresses arising in the structure during thermal shock.

Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Investigation on self-heating effect in carbon nanotube field-effect transistors

Highly-Doped Region Optimization for Reduced Hot-Carrier Effects in Dual-Gate Low Temperature Polysilicon TFTs

Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors

Abnormal ${C}$ – ${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent P-Type LTPS TFTs

Analysis of Thermomechanical Stresses in Silicon During Heating of Aluminum Interconnects on its Surface by a Pulse Current

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

P‐11: Self‐Heating Induced Degradation in a Metal‐Oxide Thin‐Film Transistor on a Flexible Substrate and Its Mitigation

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

Electrothermal Effects on Hot Carrier Injection in N-Type Soi Finfet under Circuit-Speed Bias

The Effect Of Device Electrode Geometry On Performance After Hot-Carrier Stress In Amorphous In-Ga-Zn-O Thin Film Transistors With Different Via-Contact Structures