Abstract:We investigated the improvement methods of the electrical characteristics and reliability of flexible low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) by optimizing the annealing process. We investigated the effect of annealing on the device properties via electrical measurement and density-of-state (DOS) analysis. The annealing temperature should be reduced for flexible LTPS TFTs compared to rigid devices because the range of the thermal stability of flexible substrate is narrower than that of the glass substrate. As the activation annealing temperature (Ta) decreased, the threshold voltage and field-effect mobility (μFE) decreased, and the subthreshold swing (SS) increased. When the post-annealing temperature (Tpa) decreased, μFE increased, and the changes in the other parameters were negligible. The DOS decreased with an increase in Ta and a reduction in Tpa. These results originated from ineffective dopant activation and defect curing due to the lower Ta and the enhanced hydrogen defect passivation at the lower Tpa. Therefore, flexible LTPS TFTs with reduced Ta values exhibited similar μFE values and lower SS values when the post-annealing process was omitted. Furthermore, removing the post-annealing process improved the reliability of the flexible LTPS TFTs with reduced Ta values under electrical stress. According to a hot-carrier instability analysis, defect passivation by hydrogen was more stable than defect curing with a higher Ta. Consequently, although Ta was low for flexible LTPS TFTs, the electrical performance and reliability could be improved by optimizing the post-annealing process.

Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

The Hot-Carrier-Induced Degradation of Soi Ligbt under Ac Stress Conditions

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs

Abnormal Threshold Voltage Shifts in P-Channel Low Temperature Polycrystalline Silicon TFTs under Deep UV Irradiation

Correlation Between Electrical Characteristics and Oxide/Polysilicon Interface Morphology for Excimer-Laser-Annealed Poly-Si TFTs

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Electrical-performance and reliability improvement of flexible low-temperature polycrystalline silicon thin-film transistors via post-annealing process

Performance Improvement of Excimer Laser Annealed Poly-Si TFTs Using Fluorine Ion Implantation

Surface Channel Hot-Carrier Effect on CLC N-Tfts

Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on Clc Tfts

Impact of Repeated Uniaxial Mechanical Strain on Flexible A-Igzo Thin Film Transistors with Symmetric and Asymmetric Structures

Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress

Degradation Behavior of Etch-Stopper-Layer Structured A-Ingazno Thin-Film Transistors under Hot-Carrier Stress and Illumination

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Electrical performance of a-Si:H and poly-Si TFTs with heating stress