Abstract:The reliability performance of InxGa1-xAs n-MOSFETs with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated. The following new phenomena are demonstrated: 1) There are high densities of fast interface traps Nit and slow oxide border traps NSOX near the interface between InGaAs and Al2O3. The border traps are more fragile under stress, and therefore, the stress mainly induces border traps. 2) The stress-induced border traps consist of permanent acceptor traps and recoverable donor traps. Acceptor trap energy density ΔDSOXAcceptor(E) is mainly distributed above the conduction band edge Ec of InGaAs with a tail extending to the midgap, whereas donor trap energy density ΔDSOXDonor(E) has a large distribution inside the InGaAs energy gap with a tail extending to the conduction band. 3) Flicker noise variation after stress and its correlation to the acceptor and donor trap generation and recovery are demonstrated. 4) The recoverable donor traps induce the subthreshold slope and off-current degradation in the stress phase and recover in the recovery phase and also induce continuous degradation of on-current in the recovery phase. The permanent acceptor traps induce the transconductance and on-current degradation. The long-term device lifetime is mainly determined by the generation rate of the acceptor traps. 5) Comprehensive comparison between the Si and InGaAs MOSFETs' degradation behaviors under bias temperature instability stress is presented. The physical recovery of donor oxide traps in dielectric in InGaAs/Al2O3 has never been observed in a Si MOS structure, deserving special attention and further investigation.

The influence of temperature on dynamic gate-bias stress instability in amorphous silicon thin film transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The Stability of Tin Silicon Oxide Thin-Film Transistors with Different Annealing Temperatures

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Effect of Annealing Ambient Gases on the Bias Stability of Amorphous SnSiO Thin-Film Transistors

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

Stability of Amorphous Inalzno Thin-Film Transistors

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Origin of Bias-Stress and Illumination Instability in Low-Cost, Wide-Bandgap Amorphous Si-doped Tin Oxide-Based Thin-Film Transistors

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

Study of temperature effects of mobility, swing, and early voltages on strained MOSFET devices