Abstract:Defect annihilation of the IGZO/SiO2 layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (Ta) on the structure of the IGZO/SiO2 layer and the stabilities of coplanar IGZO TFTs were investigated in this work. An atomic depth profile showed that the IGZO/SiO2 layer included an IGZO layer, an IGZO/SiO2 interfacial mixing layer, and a SiO2 layer. Higher Ta had only one effect on the IGZO layer and SiO2 layer (i.e., strengthening chemical bonds), while it had complex effects on the interfacial mixing layer—including weakening M-O bonds (M: metallic elements in IGZO), strengthening damaged Si-O bonds, and increasing O-related defects (e.g., H2O). At higher Ta, IGZO TFTs exhibited enhanced positive bias temperature stress (PBTS) stabilities but decreased negative bias temperature stress (NBTS) stabilities. The enhanced PBTS stabilities were correlated with decreased electron traps due to the stronger Si-O bonds near the interfacial layer. The decreased NBTS stabilities were related to increased electron de-trapping from donor-like defects (e.g., weak M-O bonds and H2O) in the interfacial layer. Our results suggest that although higher Ta annihilated the structural damage at the interface from ion bombardment, it introduced undesirable defects. Therefore, to comprehensively improve electrical stabilities, controlling defect generation (e.g., by using a mild sputtering condition of source/drain electrodes and oxides) was more important than enhancing defect annihilation (e.g., through increasing Ta).

What problem does this paper attempt to address?

This paper mainly explores the impact of annealing temperature on the stability of bottom-gate coplanar indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) under bias temperature stress. ### Research Background and Objectives - **Research Subject**: Bottom-gate coplanar IGZO thin-film transistors. - **Key Performance Indicators**: Positive Bias Temperature Stress (PBTS) stability and Negative Bias Temperature Stress (NBTS) stability. - **Research Purpose**: To investigate the effects of annealing temperature on the IGZO/SiO2 layer structure and the PBTS and NBTS stability of the transistors. ### Main Findings - **Impact of Annealing Temperature**: - Higher annealing temperatures can strengthen the chemical bonds in the IGZO layer and the SiO2 layer. - For the IGZO/SiO2 interface mixed layer, higher annealing temperatures have complex effects: weakening metal-oxygen (M-O) bonds, enhancing damaged Si-O bonds, and increasing oxygen-related defects (such as water molecules). - As the annealing temperature increases, the PBTS stability of IGZO TFTs improves, but the NBTS stability decreases. - **Mechanism of Bias Temperature Stress Stability**: - The improvement in PBTS stability is related to the reduction in interface trap density, which is attributed to the increased strength of Si-O bonds near the interface at higher annealing temperatures. - The decrease in NBTS stability is associated with an increase in donor-like defects such as weak M-O bonds and water molecules at the interface, which exacerbate electron de-trapping phenomena. ### Conclusion and Recommendations - Although higher annealing temperatures can eliminate interface damage, they may also introduce undesirable defects. - Therefore, to comprehensively improve electrical stability, controlling defect generation (e.g., by preparing source/drain electrodes and oxides under mild sputtering conditions) is more important than enhancing defect elimination.

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