Abstract:Thin-film transistors (TFTs) with solutionprocessed indium oxide (In 2 O 3 ) as the channel layer and with aluminium oxide as the gate dielectric were fabricated. The fabricated In 2 O 3 TFTs are tested for reliability in low-voltage operation. Measurement results show that the threshold voltage (V th ) increases from 0.6 V to 1.4 V under positive bias stress (PBS) and decreases from 0.55 V to 0.22 V under negative bias stress (NBS). Upon relaxation for long enough time, Vth restores close to the pristine values. When switching the In 2 O 3 TFTs repeatedly by applying a pulsed voltage of ±3V to the gate, the Vth shift (ΔVth) depends on the pulse width. While ΔVth generally decreases with the pulse width under pulsed NBS, Vth instability is considerably worse under pulsed PBS, particularly when the pulse width is between 5 μs and 50 ms. Apart from revealing the differences in the trapping and de-trapping of electrons and holes at the In 2 O 3 /Al 2 O 3 interface, the results have implications for using the In 2 O 3 TFTs in circuits in which they are biased or switched repeatedly.

Bias stress induced threshold voltage instability in solution processed organic thin film transistor

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In<inf>2</inf>O<inf>3</inf> Thin-Film Transistors

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor

Threshold Voltage Instabilities In Perpetual Switching Of Low-Voltage Thin-Film Transistors With Solution-Processed In2o3 Channel Layer

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

Mechanism Study of Positive-Bias Stress Stability for Solution Processed Oxide Semiconductor TFT

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Threshold Voltage Instabilities in Perpetual Switching of Low-Voltage Thin-Film Transistors with Solution-Processed In<inf>2</inf>O<inf>3</inf> Channel Layer

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Investigation on Stability in Solution-Processed In-Zn-Sn-O TFT Array under Various Intensity of Illumination

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Gate Modulation of Threshold Voltage Instability in Multilayer Inse Field Effect Transistors