Abstract:Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative Vth shift, respectively, during the various gate stresses. In particular, the negative Vth shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the Vth can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies.

Impact of Repeated Uniaxial Mechanical Strain on Flexible A-Igzo Thin Film Transistors with Symmetric and Asymmetric Structures

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

Effects of Mechanical Stress on Flexible Dual‐Gate A‐ingazno Thin‐Film Transistors

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

The Effect Of Device Electrode Geometry On Performance After Hot-Carrier Stress In Amorphous In-Ga-Zn-O Thin Film Transistors With Different Via-Contact Structures

18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible A‐ingazno Thin‐Film Transistor

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

16‐3: Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual‐gate a‐IGZO Thin Film Transistors

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ Mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at <inline-formula> <tex-math notation="LaTeX">${R} = 2$ </tex-math></inline-formula> mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Investigating Degradation Behaviors Induced by Mobile Cu Ions under High Temperature Negative Bias Stress in A-Ingazno Thin Film Transistors