Abstract:The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress

Strain Distribution and Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin Film Transistors under Biaxial Bending

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ Mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at <inline-formula> <tex-math notation="LaTeX">${R} = 2$ </tex-math></inline-formula> mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Impact of Repeated Uniaxial Mechanical Strain on Flexible A-Igzo Thin Film Transistors with Symmetric and Asymmetric Structures

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress

Physical Mechanism of the Mechanical Bending of High-Performance Organic TFTs and the Effect of Atmospheric Factors

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress

Evaluation of Positive-Bias-Stress-Induced Degradation in InSnZnO Thin-Film Transistors by Low Frequency Noise Measurement

Bias stress induced threshold voltage instability in solution processed organic thin film transistor