Abstract:The asymmetrical degradation behaviors of amorphous indium–gallium–zinc oxide thin-film transistors are studied comprehensively under various gate and drain bias stresses. The transfer curve moves to the negative direction after bias stresses are applied, and different types of asymmetrical degradation are observed depending upon the magnitude of the applied gate and drain bias stresses. After the application of gate-to-source (VGS) and drain-to-source (VDS) bias stresses of (VGS = 16 V, VDS = 16 V) and (VGS = 22 V, VDS = 10 V), the forward mode transfer curve exhibits a more negative shift compared to that of the reverse mode, whereas opposite results are observed under the stress condition of (VGS = 10 V, VDS = 25 V). From the two-dimensional simulation results and the separately extracted subgap density of states in the source and drain sides of the thin film transistors before and after the application of various bias stresses, the local high electric field-induced nonuniform generation rate of the subgap states near the conduction band edge is considered to be the dominant mechanism causing the asymmetrical degradation of the devices under various gate and drain bias stresses. The generation of the subgap states is observed at different locations depending upon the magnitude of the applied gate and drain bias stresses.

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Thin-Film Transistor $v_{\rm Th}$ Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

A gate-stress-induced ΔVth model reflecting impact of electric field in IGZO thin film transistors

Anomalous Bias-Stress-Induced Unstable Phenomena of Inzno Thin-Film Transistors Using Ta2o5 Gate Dielectric

Mechanism Study of Positive-Bias Stress Stability for Solution Processed Oxide Semiconductor TFT

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled Pmosfets

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Modeling of Degradation Caused by Channel Hot Carrier and Negative Bias Temperature Instability Effects in P-Mosfets

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

Influence of White Light Illumination on the Performance of A-Igzo Thin Film Transistor under Positive Gate-Bias Stress

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

A rigorous analytical model for short-channel junctionless double-gate MOSFETs