Abstract:The field‐effect mobility is shown to be often overestimated by up to a factor of two using the conventional approach in transistors exhibiting non‐linear transfer characteristics. Device measurements, numerical calculations, and simulations are employed to illustrate corrected mobility calculations in amorphous metal oxide and molybdenum disulfide transistors. The measurement of mobility and threshold voltage in thin‐film transistors (TFTs) in which the mobility is a function of gate voltage or carrier density is usually done inaccurately. Herein, accurate mobility calculations within the framework of the gradual channel approximation are described. Conventionally, the derivative of drain current with respect to gate voltage is often used to calculate mobilities in the linear region. This procedure often leads to errors when the mobility is not constant. Using a first‐order finite difference‐based calculations, it is shown how the correct field‐effect mobility can be extracted. The corrected mobility can be smaller than the conventionally calculated field‐effect mobility by up to a factor of 2. It is also shown that the corrected field‐effect mobility is identical to the average mobility. A threshold voltage that is independent of gate voltage value and suitable for disordered semiconductors is used for more accurate mobility calculations. The mobility and threshold voltage calculations are illustrated with experimental data from multiple TFTs with indium gallium zinc oxide, zinc tin oxide, and molybdenum disulfide channel layers.

Thin-Film Transistor V-th Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

A gate-stress-induced ΔVth model reflecting impact of electric field in IGZO thin film transistors

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

Modeling Novel Double-In-Plane Gate Electric-Double-Layer Thin-Film and Nanoscale Transistors

Incorporating the Dynamic Threshold Voltage into the SPICE Model of Schottky-Type P-Gan Gate Power HEMTs

A ternary gate-connected threshold switching thin-film transistor

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

An Empirical Model for Static I–V Characteristics of Double Gate Tunneling Field Effect Transistor

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets