Abstract:The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

Reliability of Poly-Si TFTs Under Voltage Pulse With Fast Transition Time

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure

Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress

Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs

Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

Degradation Behavior of Etch-Stopper-Layer Structured A-Ingazno Thin-Film Transistors under Hot-Carrier Stress and Illumination

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Investigation On Degradation Mechanism And Optimization For Sic Power Mosfets Under Long-Term Short-Circuit Stress

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Modelling the Threshold-Voltage Shift of Polymer Thin-Film Transistors under Constant and Variable Gate-Bias Stresses