Abstract:Under a self-heating stress (SHS), amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) would exhibit a severe hump in the transfer characteristics. A model based on state transformation of oxygen vacancies is proposed to explain this phenomenon. The channel region of TFT is considerably self-heated if a large current flows through due to the poor thermal conductivity of a-IGZO. The temperature in the channel region can be raised with the high-power SHS so high that the oxygen vacancies there perform a state transformation from deep-donors and/or traps to shallow-donors, making the carrier concentration increase remarkably in the a-IGZO channel layer. The temperature is highest in the center of channel region and thus the state transformation takes place there first, leading to the carrier concentration increasing there first. As a result, the TFT has a lower turn-on voltage in the central channel region than in the rest, bringing finally about the hump in the transfer curves. The model is well verified by annealing the a-IGZO, which shows that the carrier concentration surely increases greatly when the annealing temperature is over 300 degrees C.

Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors

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Research of Hot-carrier-induced Degradation on SOI NLIGBT

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Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress

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Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Solution-processed Coplanar Top-Gate ZnInSnO Thin Film Transistors and Bias Stability

Evaluation of Positive-Bias-Stress-Induced Degradation in InSnZnO Thin-Film Transistors by Low Frequency Noise Measurement

Instability of Indium Zinc Oxide Thin-Film Transistors under Transmission Line Pulsed Stress

P‐1.5: Dynamic Current Stress‐Induced Instabilities of A‐ingazno TFTs

Hot carrier effects in InGaZnO thin-film transistor

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Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

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