Abstract:Lanthanide‐doped indium zinc oxide (Ln‐IZO) was employed as the active channel layer (ACT) of thin film transistors (TFTs). The, Ln‐IZO, single‐1 ACT‐based TFT exhibited a high mobility and a small threshold voltage shift (∆VTH) within −1 V after 1‐hour negative bias temperature illumination stress (NBTIS). However, the corresponding ∆ VTH of 1‐hour positive bias temperature stress (PBTS) was as large as over 8 V. Optimized stacked structures of the ACT were adopted and obtained a significantly improved stability of PBTS. TFTs based on double‐2 ACT (Ln‐IZO/IGZO‐1) and triple‐2 ACT (Ln‐IZO/IGZO‐1/IGZO‐2) exhibited significantly lower ∆VTHs of 1.79 and 1.62 V under PBTS, respectively. Meanwhile, the excellent NBTIS stability with ∆VTH within −1 V was maintained for both double‐2‐ and triple‐2‐based TFTs. Furthermore, an appreciated VTH uniformity was obtained for triple‐2‐based TFTs, with a narrow range width of only 0.5 V. At the same time, we proposed a PBTS fitting model, using the stretched power‐law function, ∆ VTH = kTr for the deterioration of Ln‐oxide TFTs under long‐term operation. According to the proposed model, the ∆VTH could be maintained within 6 V even after 200‐hour PBTS for TFT based on triple‐2.

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Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

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On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

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Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

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Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Investigation on Stability in Solution-Processed In-Zn-Sn-O TFT Array under Various Intensity of Illumination

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method