Abstract:This study experimentally investigates electrical characteristics and degradation phenomena in polycrystalline zinc oxide thin-film transistors (ZnO-TFTs). ZnO-TFTs with Al 2 O 3 gate dielectric, Al-doped ZnO (AZO) source-drain contacts, and AZO gate electrode are fabricated using remote plasma-enhanced atomic layer deposition (PE-ALD) at a maximum process temperature of 190°C. We employ positive bias stress (PBS), negative bias stress (NBS), and endurance cycling measurements to evaluate the ZnO-TFT performance and examine carrier dynamics at the channel-dielectric interface and at grain boundaries in the polycrystalline channel. DC transfer measurements yield a threshold voltage of −5.95 V, a field-effect mobility of 53.5 cm 2 /(V∙s), a subthreshold swing of 136 mV/dec, and an on-/off-current ratio above 10 9 . PBS and NBS measurements, analysed using stretched-exponential fitting, reveal the dynamics of carrier trapping and de-trapping between the channel layer and the gate insulator. Carrier de-trapping time is 88 s under NBS at −15 V, compared to 1856 s trapping time under PBS at +15 V. Endurance tests across 10 9 cycles assess switching characteristics and temporal changes in ZnO-TFTs, focusing on threshold voltage and field-effect mobility. The threshold voltage shift observed during endurance cycling is similar to that of NBS due to the contrast in carrier trapping/de-trapping time. A measured mobility hysteresis of 19% between the forward and reverse measurement directions suggests grain boundary effects mediated by the applied gate bias. These findings underscore the electrical resilience of polycrystalline ZnO-TFTs and the aptitude for 3D heterogeneous integration applications.

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Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress

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Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor

Investigation on Stability in Solution-Processed In-Zn-Sn-O TFT Array under Various Intensity of Illumination

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Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

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Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

Enhanced Stability under Positive Bias Temperature Stress of Ln-Doped Inzno Thin Film Transistors Fabricated with a Back-Channel-Etch Structure

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Oxygen interstitial creation in a-IGZO thin-film transistors under positive gate-bias stress

Impact of Bias Stress and Endurance Switching on Electrical Characteristics of Polycrystalline ZnO-TFTs with Al 2 O 3 Gate Dielectric