Abstract:IGZO oxide semiconductors promising as next‐generation 2T0C DRAM architectures increase oxygen vacancy when gamma‐ray are irradiated, resulting in increased instability of IGZO films. The full range DOS of IGZO TFTs changed from gamma‐rays is investigated by the proposed observation method based on the multi‐wavelength light source, which is verified by TCAD simulation. The amorphous In─Ga─Zn─O (a‐IGZO) thin film transistors (TFTs) have attracted attention as a cell transistor for the next generation DRAM architecture because of its low leakage current, high mobility, and the back‐end‐of‐line (BEOL) compatibility that enables monolithic 3D (M3D) integration. IGZO‐based electronic devices used in harsh environments such as radiation exposure can be vulnerable, resulting in functional failure. Here, the behavior of subgap density‐of‐states (DOS) over full subgap range according to the impactful gamma‐ray irradiation in a‐IGZO TFTs is investigated by employing DC current–voltage (I−V) data with multiple‐wavelength light sources. To understand the origins of the radiation effect, IGZO films have been also analyzed by x‐ray photoelectron spectroscopy (XPS). Considering in‐depth electrical and chemical analysis, the unexpected increase of subthreshold leakage current caused by total ionizing dose (TID) is strongly correlated with newly discovered deep‐donor states (gDDγ(E) ) at the specific energy level. In particular, oxygen vacancies caused by the gamma‐ray irradiation give rise to undesirable electrical characteristics such as hysteresis effect and negative shift of threshold voltage (VT). Furthermore, the TCAD simulation results based on DOS model parameters are found to exhibit good agreement with experimental data and plausible explanation including (gDDγ(E) ).

Hot carrier effects in InGaZnO thin-film transistor

Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Degradation Behavior of Etch-Stopper-Layer Structured A-Ingazno Thin-Film Transistors under Hot-Carrier Stress and Illumination

Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

The Effect Of Device Electrode Geometry On Performance After Hot-Carrier Stress In Amorphous In-Ga-Zn-O Thin Film Transistors With Different Via-Contact Structures

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Improved high voltage operation of amorphous In-Ga-Zn-O thin film transistor by carrier density enhancement

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors