Abstract:In this study, the electrical performance and bending stress endurance of flexible low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) are enhanced by increasing the helium concentration (1500 sccm) during gate insulator (GI) manufacture to create a high-quality GI device. Experimental results confirm that the subthreshold swing (S.S.) and mobility of these new "high-flow" devices are better than those with a lower helium concentration, which we term "low-flow" devices. The flow of helium gas is increased to achieve a better-quality oxide layer. The energy-dispersive X-ray spectroscopy (EDS) line data show a clear enhancement in oxygen content in the devices under this helium gas process. After mechanical compression and tensile bending stresses of 100000 iterations in the channel width-axis direction, perpendicular to the channel, with bending at <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="6.025ex" height="2.176ex" style="vertical-align: -0.338ex;" viewBox="0 -791.3 2594.1 936.9" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-52" x="0" y="0"></use> <use xlink:href="#MJMAIN-3D" x="1037" y="0"></use> <use xlink:href="#MJMAIN-32" x="2093" y="0"></use></g></svg></span> mm, the modified GI devices with their more Si-O bond content exhibit less stress damage in the GI layer than do low-flow devices. As a result, this new manufacturing condition can effectively reduce the electrical degradation after negative-bias temperature stress (NBTS), and improve the overall electrical performance.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMATHI-52" d="M230 637Q203 637 198 638T193 649Q193 676 204 682Q206 683 378 683Q550 682 564 680Q620 672 658 652T712 606T733 563T739 529Q739 484 710 445T643 385T576 351T538 338L545 333Q612 295 612 223Q612 212 607 162T602 80V71Q602 53 603 43T614 25T640 16Q668 16 686 38T712 85Q717 99 720 102T735 105Q755 105 755 93Q755 75 731 36Q693 -21 641 -21H632Q571 -21 531 4T487 82Q487 109 502 166T517 239Q517 290 474 313Q459 320 449 321T378 323H309L277 193Q244 61 244 59Q244 55 245 54T252 50T269 48T302 46H333Q339 38 339 37T336 19Q332 6 326 0H311Q275 2 180 2Q146 2 117 2T71 2T50 1Q33 1 33 10Q33 12 36 24Q41 43 46 45Q50 46 61 46H67Q94 46 127 49Q141 52 146 61Q149 65 218 339T287 628Q287 635 230 637ZM630 554Q630 586 609 608T523 636Q521 636 500 636T462 637H440Q393 637 386 627Q385 624 352 494T319 361Q319 360 388 360Q466 361 492 367Q556 377 592 426Q608 449 619 486T630 554Z"></path><path stroke-width="1" id="MJMAIN-3D" d="M56 347Q56 360 70 367H707Q722 359 722 347Q722 336 708 328L390 327H72Q56 332 56 347ZM56 153Q56 168 72 173H708Q722 163 722 153Q722 140 707 133H70Q56 140 56 153Z"></path><path stroke-width="1" id="MJMAIN-32" d="M109 429Q82 429 66 447T50 491Q50 562 103 614T235 666Q326 666 387 610T449 465Q449 422 429 383T381 315T301 241Q265 210 201 149L142 93L218 92Q375 92 385 97Q392 99 409 186V189H449V186Q448 183 436 95T421 3V0H50V19V31Q50 38 56 46T86 81Q115 113 136 137Q145 147 170 174T204 211T233 244T261 278T284 308T305 340T320 369T333 401T340 431T343 464Q343 527 309 573T212 619Q179 619 154 602T119 569T109 550Q109 549 114 549Q132 549 151 535T170 489Q170 464 154 447T109 429Z"></path></defs></svg>

Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors

Strain Distribution and Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin Film Transistors under Biaxial Bending

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ Mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

A Transfer Method for High‐Mobility, Bias‐Stable, and Flexible Organic Field‐Effect Transistors

Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress

Enhancing Repetitive Uniaxial Mechanical Bending Endurance at <inline-formula> <tex-math notation="LaTeX">${R} = 2$ </tex-math></inline-formula> mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors

Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

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Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Low-Temperature Materials And Thin Film Transistors For Flexible Electronics

Rf Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates under Bending Conditions

Letter: Solution-Processed Flexible Zinc-Tin Oxide Thin-Film Transistors on Ultra-Thin Polyimide Substrates

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Electrical-performance and reliability improvement of flexible low-temperature polycrystalline silicon thin-film transistors via post-annealing process

Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.

Enhanced Stability under Positive Bias Temperature Stress of Ln-Doped Inzno Thin Film Transistors Fabricated with a Back-Channel-Etch Structure