Abstract:Recently, amorphous oxide semiconductors (AOSs) have attracted much attention owing to their various advantages. The intrinsic nature of AOSs enables to achieve high‐performance thin‐film transistors (TFTs) using low‐temperature process, which would be a strong point for next‐generation flexible electronics. However, most AOS TFTs still require postannealing treatments (>300 °C) for structural relaxation to suppress defects, which lead to the issue of thermal resistance of plastic substrates. Therefore, a strategy for obtaining both low‐temperature process and defect suppression is highly demanded for flexible electronics. To solve the former issue, a Sn–Si–O system is proposed in this paper. It is clarified that Si cations play the roles of amorphousizing SnO2 and suppressing carrier concentration. As a result, room‐temperature fabricable flexible Sn–Si–O TFTs with high mobility and high reliability are demonstrated. It is also suggested that obtaining a rigid film structure is quite important to fabricate high performance TFTs without any further postannealing treatment. The obtained saturation mobility (μsat) and on/off ratio are 7.59 cm2 V−1 s−1 and 1.59 × 107, respectively. This work suggests that amorphous Si doped SnO2 has the potential for the application to the flexible driving backplane in display industry.

Low-Temperature Materials And Thin Film Transistors For Flexible Electronics

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Low Temperature Poly-Si TFT Technology

Enhanced Electrical Stability of Thin Film Transistors Based on Nanocrystalline Silicon Films

Preparation Progress on Low Temperature Polysilicon Films

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Research on Preparation Processes of Low-Temperature Poly-Silicon Films

High Performance Transparent In-Plane Silicon Nanowire Fin-Tfts Via A Robust Nano-Droplet-Scanning Crystallization Dynamics

Transparent Nano Thin-Film Transistors for Medical Sensors, OLED and Display Applications

15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics

Comparative study of large grains and high-performance TFTs in low-temperature crystallized LPCVD and APCVD amorphous silicon films

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

Low-temperature, High-Stability, Flexible Thin-Film Transistors with a Novel ScxIn1−xO3semiconductor

Low-temperature fabrication of high performance indium oxide thin film transistors

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device

A Low Temperature Polycrystalline Si TFT Technology for Large area AMLCD Drivers