Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

High Performance Transparent In-Plane Silicon Nanowire Fin-Tfts Via A Robust Nano-Droplet-Scanning Crystallization Dynamics

High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation

Deterministic deployment of in-plane silicon nanowires for high performance large area electronics

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

High-density Integration of Uniform Sub-22 Nm Silicon Nanowires for Transparent Thin Film Transistors on Glass

High Performance Si Nanowire TFTs with Ultrahigh On/off Current Ratio and Steep Subthreshold Swing

In-Plane Solid-Liquid-Solid Growth and Engineering of Si and Si/Ge Nanowires for Integratable High Performance Fin-like Thin Film Transistors

Superfast Growth Dynamics of High-Quality Silicon Nanowires on Polymer Films Via Self-Selected Laser-Droplet-Heating.

Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates

Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Orthogonal‐Stacking Integration of Highly Conductive Silicide Nanowire Network As Flexible and Transparent Thin Films

Technology demonstration of a novel poly-Si nanowire thin film transistor

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

Transparent All-Carbon-Nanotube Thin-film Transistors

Fully Transparent Thin-Film Transistor Devices Based on Sno2 Nanowires

Transparent driving thin-film transistor circuits based on uniformly grown single-walled carbon nanotubes network