High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation
Xiaopan Song,Lei Wu,Yifei Liang,Zongguang Liu,Junzhuan Wang,Jun Xu,Kunji Chen,Linwei Yu
DOI: https://doi.org/10.1002/aelm.202201236
IF: 6.2
2023-02-16
Advanced Electronic Materials
Abstract:A room‐temperature solution oxidizing/etching cycling passivation technique has been developed for the fabrication of high‐performance silicon nanowire TFTs, directly integrated upon glass substrate, achieving Ion/Ioff current ratio, subthreshold swing and high transparency of > 106, 120 mV dec−1 and 90% (ITO electrodes), respectively, making them ideal candidates for building the next generation of high aperture displays, transparent electronics, and augmented reality applications. Catalytic synthesized ultrathin silicon nanowires (SiNWs) are ideal 1D channel materials to fabricate high‐performance transparent and low‐cost thin film transistors (TFTs) that are widely needed for flexible electronics and displays. In this work, a scalable integration of orderly array of SiNW array, with a uniform diameter of only 52 ± 4 nm, grown directly upon glass/wafer substrates, via a guided in‐plane solid–liquid–solid (IPSLS) process, and passivated by a new solution oxidizing/etching cycling technique is demonstrated. This has enabled an all‐low‐temperature ( 106 and 120 mV dec−1 respectively, with excellent negative and positive bias stabilities. Importantly, the SiNW‐TFTs fabricated on glasses with ITO/or metal electrodes demonstrate a high transparency of 90% or 73% respectively, making them ideal candidates for building the next generation of high aperture displays, transparent electronics, and augmented reality applications.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology