Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Low Temperature Poly-Si TFT Technology

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

A Low Temperature Polycrystalline Si TFT Technology for Large area AMLCD Drivers

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Low-Temperature Materials And Thin Film Transistors For Flexible Electronics

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

A Novel Ultra-Thin Channel Poly-Si TFT Technology

15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics

A Hybrid A-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

A Novel Two-Step Laser Crystallization Technique for Low-Temperature Poly-Si TFTs

High Performance Transparent In-Plane Silicon Nanowire Fin-Tfts Via A Robust Nano-Droplet-Scanning Crystallization Dynamics

Study on Residual Image in Low-Temperature Poly-Si Oxide TFT-Based OLED Display on Polyimide Substrate

Sub-Micron Oxide TFT for the Era of Oxide-Based Display

Flexible Thin-Film Transistor and Integration Strategies for Future Intelligent Displays

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

Pulsed Excimer Laser Crystallization and Doping for the Fabrication of Poly-Si and -SiGe TFTs

A Novel Ultrathin Elevated Channel Low-Temperature Poly-Si TFT