Abstract:In this work, we propose a simple and efficient interfacial modification method for thin-film transistor (TFT)-1 with poor stability under bias stress. For conventional top-contact TFT-2, the sputtering passivation layer will cause the device to be in a short-circuit condition. We used inverted coplanar-structured TFT-3 to separate the high conductivity layer from the S/D electrodes to avoid the short-circuit failure of the device, but this will cause a hump effect. Ultraviolet treatment and air annealing were performed on TFT-3 simultaneously to obtain TFT-4 with high mobility (μsat = 45.5 cm2 V–1 s–1), steep subthreshold swing (SS = 86 mV/dec), and good bias stability (±20 V, 3600 s, NBS: −0.1 V, PBS: +0.9 V, PGDBS: +0.5 V). The forward and reverse tests of TFT-1 and TFT-4 after the PGDBS test show that TFT-4 has a good stability of the asymmetric electrical bias. Finally, XRR, XPS, AFM, and contact angle were tested to further investigate the material mechanisms. In this paper, we show that the interfacial passivation of TFT can effectively isolate the invasion of external water/oxygen and compensate for interfacial defects and dangling bonds. The decomposition and rearrangement of the oxide are induced by UV + thermal annealing, which optimizes the stacking pattern of the cells, effectively reducing the defect states and eliminating parasitic channels and the hump phenomenon. Finally, an amorphous oxide semiconductor (AOS)-TFT instrument with high mobility and good stability is prepared. The method in this paper addresses the problem that the passivation layer cannot be prepared by sputtering, which is a cost-effective process.

48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

31‐3: Enhancing Micro‐LED Pixel Circuit Performance through Threshold Voltage Compensation Utilizing LTPO Technology

P‐1: LTPO Technology for Low Power Comsumption

Flexible TFT backplane development for extremely small bending radius with organic ILD and novel TFT structures

P‐17: Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability

P‐4.12: Narrow channel a‐IGZO TFTs for 1500PPI VR LTPO LCD display

Low Temperature Poly-Si TFT Technology

Study on Residual Image in Low-Temperature Poly-Si Oxide TFT-Based OLED Display on Polyimide Substrate

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

5‐5: Development of 1500PPI VR LCD display device based on LTPO process structure

Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing System

The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment

1.1: Invited Paper: TFT Backplane for Display

57‐2: High performance LTPS TFT Backplane Using Blue Laser Diode Annealing for Mini/Micro LED Display

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display

97‐2: Late‐News Paper: Development of High‐Mobility Indium‐rich IGZO TFT Device for IT OLED Display

Image quality enhancement in variable refresh rate LTPO-based AMOLED displays using a gate in panel voltage compensation scheme

P‐11: High Mobility BCE Oxide TFT Technology for Demux Driving Notebook LCD