Abstract:The significance of backplane devices for ultra-high-resolution (UHR) display has increased with the recent development of augmented reality (AR) and virtual reality (VR) devices. Since the human visual resolution can distinguish up to 60 pixels per degree (PPD), the AR/VR device panel needs at least 3000 pixels per inch (PPI) to exceed the human retina resolution limit for clear display without screen effect. As a results, the unit pixel pitch of thin film transistor (TFT) for UHR display should be not only smaller than a few micrometers (~3 μm), TFT channel length should also be sub-micrometers level. In active matrix organic light emitting diode (AMOLED) display type, self-aligned top gate (SATG) TFT has been widely used as a planar backplane device structure because of its low parasitic capacitance and tolerance of illumination degradation caused by the light from emitting layer [1-2]. However, SATG TFT has fundamental disadvantages for device miniaturization due to its essentially required area of metallization region for reducing contact resistance and scaling limit of channel induced by carrier diffusion shrinking effective channel length. For this reason, we suggested a size tunable oxide channel VTFT structure that can achieve a high pixel density on account of structural benefit on device footprint. In this work, we fabricated amorphous indium gallium zinc oxide (a-IGZO) based VTFT. The previously published VTFT structure, channel length is determined by the thickness of spacer between source and drain electrodes [3]. Owing to spacer etching process, uneven backchannel roughness and high off current has become well-known issues of VTFT. On the contrary, the proposed VTFT structure has a controllability of effective channel aspect ratio because source and drain electrodes are able to be patterned by photolithography process. Furthermore, the parasitic capacitance is also relatively less than the formerly reported VTFTs controlled by inevitable thickness limit structurally due to the electrodes. To sum up, we not only realized the oxide channel VTFT that meets high performance for AR/VR display, but opened new application possibility to UHR electronic devices platform. Figure 1. (a) Schematic of the proposed VTFT (b) Transfer characteristic of VTFT Acknowledgement This work was supported by the Korea Evaluation Institute of Industrial Technology(KEIT) grant funded by the Korea government (MOTIE) (No. 2021-11-1283) References Kang, Dong Han, et al. "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits." IEEE electron device letters 32.10 (2011): 1385-1387. Wang, Guoying, et al. "8.3: High Stability Against Light and Heat Based on the Top Gate Self‐Aligned a‐IGZO TFTs under OLED Dislplay." SID Symposium Digest of Technical Papers. Vol. 49. 2018. Petti, Luisa, et al. "Flexible quasi-vertical In-Ga-Zn-O thin-film transistor with 300-nm channel length." IEEE Electron Device Letters36.5 (2015): 475-477. Figure 1

P‐4.12: Narrow channel a‐IGZO TFTs for 1500PPI VR LTPO LCD display

5‐5: Development of 1500PPI VR LCD display device based on LTPO process structure

P‐17: Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability

48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

P‐6.13: 3D Stacked Hybrid TFT Integrated Circuits for 1100 PPI AMOLED Display

P‐2: High‐Performance LTPO TFT‐LCD Using Metal as Hydrogen Barrier Layer

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

Vertical Oxide Channel Thin Film Transistor for Ultra-High-Resolution Display

P‐11: High Mobility BCE Oxide TFT Technology for Demux Driving Notebook LCD

Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

(Invited) Short Channel Coplanar Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors on Polyimide Substrate for High Resolution Displays

High Resolution Inkjet Printed Oxide Thin Film Transistors with Self-Aligned Fine Channel Bank Structure.

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

27‐2: Novel LTPS‐TFT Backplane Structure on Glass for 1,443ppi 4.3‐in. AMOLED VR Display

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

P‐1.3: Development of an 11.6‐inch 144Hz LCD Utilizing an IGZO TFT Backplane