Abstract:A novel structure design of the p‐type low‐temperature polycrystalline silicon thin‐film transistor applied to the pixel structure of the display is proposed to achieve the improvement of the aperture ratio and the hot‐carrier reliability. With the use of the proposed architecture, displays can possess the advantageous properties of high‐resolution, which may motivate the present state of the art to further approach future displays. In this study, a novel structural design of the p‐type low‐temperature polycrystalline silicon thin‐film transistors (p‐type LTPS TFTs) applied to the pixel structure of displays is proposed. Compared to the conventional pixel structure of displays, the proposed architecture can achieve the aperture ratio improvement by stacking the switch thin‐film transistor and the storage capacitor in a pixel region to enlarge the active space. Therefore, the demands of high‐resolution characteristics, such as a high aperture ratio, and high pixel densities for high‐end displays or novel technologies, can be satisfied by the adoption of the proposed design concept. Furthermore, the discussion of experimental and simulated results in terms of device physics of the transistor indicates that proposed TFTs possess higher performance and reliability properties. By modulating the geometry of the drain‐connected bottom metal in stacked TFTs, output characteristics and hot carrier phenomenon in devices can be further improved. Time‐dependent transfer characteristics, extracted electrical parameters, and numerical simulation results are performed to support our design.

P‐6.13: 3D Stacked Hybrid TFT Integrated Circuits for 1100 PPI AMOLED Display

P‐17: Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability

P‐4.12: Narrow channel a‐IGZO TFTs for 1500PPI VR LTPO LCD display

High-Resolution Flexible AMOLED Display Integrating Gate Driver by Metal–Oxide TFTs

Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane

12.2: High Performance AMOLED Pixel Circuit Using Interleaved Emit Signals Based on Low‐Temperature Poly‐Si and Oxide (LTPO) TFTs

Digital driver for 2-inch LTPS AM-OLED displays

P‐13.7: A novel approach to achieving high resolution of OLED display by ink‐jet printing method

Novel Ltps-Tft Pixel Circuit with Oled Luminance Compensation for 3d Amoled Displays

5‐5: Development of 1500PPI VR LCD display device based on LTPO process structure

P‐11.5: Realization of High PPI Transparent TFT Backplane and Its Application in Micro‐LED Display

P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display

9‐4: Late‐News Paper: Full Color Organic Light Emitting Diodes on Silicon Micro‐display with Ultra‐high Luminescence and High Resolution

A High-Reliability Gate Driver Integrated in Flexible AMOLED Display by IZO TFTs

New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

A Stacked p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor for Future Display Applications

P‐27: A Novel Pixel Circuit with Threshold Voltage Variation Compensation in Three‐Dimensional AMOLED on Silicon Microdisplay

27‐2: Novel LTPS‐TFT Backplane Structure on Glass for 1,443ppi 4.3‐in. AMOLED VR Display

P-6.10: LTPS-TFT Process for OLED and some issues generated from the manufacturing

P‐21: Student Poster: Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors for High‐Resolution Active‐Matrix Ferroelectric Liquid‐Crystal Displays

Monolithic 3D sequential integration realizing 1600-PPI red micro-LED display on Si CMOS driver IC