Abstract:Abstract— An indium gallium zinc oxide (IGZO) film with an amorphous phase was deposited and had a very flat morphology with a RMS value of 0.35 nm. IGZO TFTs were fabricated on a glass substrate by conventional photolithography and wet‐etching processes. IGZO TFTs demonstrated a high mobility of 124 cm2/V‐sec, a high on/off ratio of over 108, a desirable threshold voltage of 0.7 V, and a sub‐threshold swing of 0.43 V/decade. High mobility partially resulted from the fringing‐electric‐field effect that leads to an additional current flow beyond the device edges. Therefore, considering our device geometry, the actual mobility was about 100 cm2/V‐sec, and had a very low dependence on the variation of W/L (channel width and length) and thickness of the active layer. IGZO TFTs were also fabricated on a flexible metal substrate for a conformable display application. TFT devices showed an actual mobility of 72 cm2/V‐sec, a high on/off ratio of ∼107, and a sub‐threshold swing of 0.36 V/decade. There was no significant difference before, during, or after bending. Moreover, an IGZO TFT array was fabricated and a top‐emitting OLED device was successfully driven by it. Therefore, the oxide TFT could be a promising candidate as a backplane for OLED devices.

31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors

High-Resolution Flexible AMOLED Display Integrating Gate Driver by Metal–Oxide TFTs

A High-Reliability Gate Driver Integrated in Flexible AMOLED Display by IZO TFTs

P-5.2: A gate driver circuit with a-IGZO TFTs for a 15-inch AMOLED display

Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

The design of a 15-inch AMOLED display derived by GOA

60‐2: Panel Design Technology for a 31‐inch GOA Drived AMOLED Display with BYYB OLED Structure and Slim Border

Dual-Gate A-Igzo TFTs for Gate Driver Application

A Low Power TG A-Igzo TFT Gate Driver Circuit for AMOLED Display

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays

24‐4: Flexible AMOLED Based on Oxide TFT with High Mobility

7-Inch Ink-jet Printing Flexible OLED Display with Narrow Bezel

Uniformity Research of an Advanced 31-Inch 4K AMOLED Display

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

47-4:Invited Paper: Flexible AMOLED Based on Oxide TFT with High Mobility

8.1: Invited Paper: 17‐inch Flexible IGZO OLED Display by Ink‐jet Printing Method

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Flexible Amorphous Oxide Thin-Film Transistors on Polyimide Substrate for AMOLED

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

Gate Driver on Array With Multiple Outputs and Variable Pulse Widths for Low-Temperature Polysilicon and Oxide (LTPO) TFTs Driven AMOLED Displays