Abstract:The significance of backplane devices for ultra-high-resolution (UHR) display has increased with the recent development of augmented reality (AR) and virtual reality (VR) devices. Since the human visual resolution can distinguish up to 60 pixels per degree (PPD), the AR/VR device panel needs at least 3000 pixels per inch (PPI) to exceed the human retina resolution limit for clear display without screen effect. As a results, the unit pixel pitch of thin film transistor (TFT) for UHR display should be not only smaller than a few micrometers (~3 μm), TFT channel length should also be sub-micrometers level. In active matrix organic light emitting diode (AMOLED) display type, self-aligned top gate (SATG) TFT has been widely used as a planar backplane device structure because of its low parasitic capacitance and tolerance of illumination degradation caused by the light from emitting layer [1-2]. However, SATG TFT has fundamental disadvantages for device miniaturization due to its essentially required area of metallization region for reducing contact resistance and scaling limit of channel induced by carrier diffusion shrinking effective channel length. For this reason, we suggested a size tunable oxide channel VTFT structure that can achieve a high pixel density on account of structural benefit on device footprint. In this work, we fabricated amorphous indium gallium zinc oxide (a-IGZO) based VTFT. The previously published VTFT structure, channel length is determined by the thickness of spacer between source and drain electrodes [3]. Owing to spacer etching process, uneven backchannel roughness and high off current has become well-known issues of VTFT. On the contrary, the proposed VTFT structure has a controllability of effective channel aspect ratio because source and drain electrodes are able to be patterned by photolithography process. Furthermore, the parasitic capacitance is also relatively less than the formerly reported VTFTs controlled by inevitable thickness limit structurally due to the electrodes. To sum up, we not only realized the oxide channel VTFT that meets high performance for AR/VR display, but opened new application possibility to UHR electronic devices platform. Figure 1. (a) Schematic of the proposed VTFT (b) Transfer characteristic of VTFT Acknowledgement This work was supported by the Korea Evaluation Institute of Industrial Technology(KEIT) grant funded by the Korea government (MOTIE) (No. 2021-11-1283) References Kang, Dong Han, et al. "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits." IEEE electron device letters 32.10 (2011): 1385-1387. Wang, Guoying, et al. "8.3: High Stability Against Light and Heat Based on the Top Gate Self‐Aligned a‐IGZO TFTs under OLED Dislplay." SID Symposium Digest of Technical Papers. Vol. 49. 2018. Petti, Luisa, et al. "Flexible quasi-vertical In-Ga-Zn-O thin-film transistor with 300-nm channel length." IEEE Electron Device Letters36.5 (2015): 475-477. Figure 1

Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

Bipolar TADF Interlayer for High Performance Hybrid WOLEDs with an Ultrathin Non-Doped Emissive Layer Architecture

Tft Backplane Based On Amorphous Oxide Semiconductor

Vertical Oxide Channel Thin Film Transistor for Ultra-High-Resolution Display

Organic thin-film transistors for organic light-emitting flat-panel display backplanes

Flexible TFT backplane development for extremely small bending radius with organic ILD and novel TFT structures

27‐2: Novel LTPS‐TFT Backplane Structure on Glass for 1,443ppi 4.3‐in. AMOLED VR Display

P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display

31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors

Control of subthreshold swing using an in situ PEALD nano-laminated IGZO/Al2O3 multi-channel structured TFT

The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Efficient and stable one-micrometre-thick organic light-emitting diodes

P‐6.13: 3D Stacked Hybrid TFT Integrated Circuits for 1100 PPI AMOLED Display

Advanced hybrid process with back contact IGZO‐TFT

Prospects of oxide TFTs approaching LTPS

Eliminating Leakage Current in Thin‐Film Transistor of Solution‐Processed Organic Material Stack for Large‐Scale Low‐Power Integration

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

2.3: High Mobility Top‐Gate Self‐Aligned and BCE a‐IGTO TFTs Application to Micro‐LED and Mini‐LED Display