Abstract:Amorphous indium-gallium-zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density (≥500 pixels per inch) and good form factor do not often employ a-IGZO transistors due to their modest mobility (10-20 cm2/(V s)). Hybrid low-temperature polycrystalline silicon and oxide transistor (LTPO) technology is being adapted in high-end mobile AMOLED devices due to its ultralow power consumption and excellent current drivability. The critical issues of LTPO (including a complicated structure and high fabrication costs) require a search for alternative all-oxide thin-film transistors (TFTs) with low-cost processability and simple device architecture. The atomic layer deposition (ALD) method is a promising route for high-performance all-oxide TFTs due to its unique features, such as in situ cation composition tailoring ability, precise nanoscale thickness controllability, and excellent step coverage. Here, we report an in-depth comparative investigation of TFTs with indium-gallium oxide (IGO)/gallium-zinc oxide (GZO) and indium-zinc oxide (IZO)/GZO heterojunction stacks using an ALD method. IGO and IZO layers with different compositions were tested as a confinement layer (CL), whereas the GZO layer was used as a barrier layer (BL). Optimal IGO/GZO and IZO/GZO channels were carefully designed on the basis of their energy band properties, where the formation of a quasi-two-dimensional electron gas (q2DEG) near the CL/BL interface is realized by rational design of the band gaps and work-functions of the IGO, IZO, and GZO thin films. To verify the effect of q2DEG formation, the device performances and stabilities of TFTs with CL/BL oxide heterojunction stacks were examined and compared to those of TFTs with a single CL layer. The optimized device with the In0.75Zn0.25O/Ga0.80Zn0.20O stack showed remarkable electrical performance: μFE of 76.7 ± 0.51 cm2/(V s), VTH of -0.37 ± 0.19 V, SS of 0.13 ± 0.01 V/dec, and ION/OFF of 2.5 × 1010 with low operation voltage range of ≥2 V and excellent stabilities (ΔVTH of +0.35, -0.67, and +0.08 V for PBTS, NBIS, and CCS, respectively). This study suggests the feasibility of using high-performance ALD-derived oxide TFTs (which can compete with the performance of LTPO transistors) for high-end mobile AMOLED displays.

Control of subthreshold swing using an in situ PEALD nano-laminated IGZO/Al2O3 multi-channel structured TFT

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process

Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

Flexible TFT backplane development for extremely small bending radius with organic ILD and novel TFT structures

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications

High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel